AP4816GSM MOSFET Datasheet: N-Ch, 30V, 11.5A. Full specification with pinout and replacement list

AP4816GSM Specs and Replacement

Type Designator: AP4816GSM

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.4 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 11.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 8 nS

Cossⓘ - Output Capacitance: 320 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.013 Ohm

Package: SO8

AP4816GSM substitution

- MOSFET ⓘ Cross-Reference Search

AP4816GSM datasheet

..1. Size:131K ape
ap4816gsm.pdf pdf_icon

AP4816GSM RoHS-compliant Product Advanced Power DUAL N-CHANNEL MOSFET WITH Electronics Corp. SCHOTTKY DIODE S1/D2 Simple Drive Requirement CH-1 BVDSS 30V S1/D2 S1/D2 DC-DC Converter Suitable RDS(ON) 22m D1 Fast Switching Performance ID 6.7A G2 CH-2 BVDSS 30V S2/A S2/A SO-8 RDS(ON) 13m G1 Description ID 11.5A The Advanced Power MOSFETs from APEC provide the des... See More ⇒

9.1. Size:60K ape
ap4813gyt-hf.pdf pdf_icon

AP4813GYT-HF Halogen-Free Product Advanced Power N-CHANNEL MOSFET WITH SCHOTTKY Electronics Corp. DIODE D Simple Drive Requirement BVDSS 30V Good Recovery Time RDS(ON) 10m Schottky Diode Small Size & Lower Profile ID 15A G RoHS Compliant & Halogen-Free S D D Description D Advanced Power MOSFETs from APEC provide the designer with the D best combination of fas... See More ⇒

9.2. Size:105K ape
ap4810gsm.pdf pdf_icon

AP4810GSM RoHS-compliant Product Advanced Power N-CHANNEL MOSFET WITH SCHOTTKY Electronics Corp. DIODE Simple Drive Requirement BVDSS 30V D D D Good Recovery Time RDS(ON) 13.5m D Fast Switching Performance ID 11A G S S SO-8 S D Description Advanced Power MOSFETs from APEC provide the Schottky Diode G designer with the best combination of fast switching, rugge... See More ⇒

9.3. Size:102K ape
ap4813gsm-hf.pdf pdf_icon

AP4813GSM-HF Halogen-Free Product Advanced Power N-CHANNEL MOSFET WITH SCHOTTKY Electronics Corp. DIODE Simple Drive Requirement BVDSS 30V D D D Good Recovery Time RDS(ON) 9m D Fast Switching Performance ID 13A G S RoHS Compliant & Halogen-Free S SO-8 S D Description Advanced Power MOSFETs from APEC provide the Schottky Diode G designer with the best comb... See More ⇒