AP50T03GJ
MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AP50T03GJ
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 34.7
W
|Vds|ⓘ - Voltaje máximo drenador - fuente: 30
V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20
V
|Id|ⓘ - Corriente continua de drenaje: 37
A
Tjⓘ - Temperatura máxima de unión: 150
°C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 75
nS
Cossⓘ - Capacitancia
de salida: 180
pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.016
Ohm
Paquete / Cubierta:
TO251
- Selección de transistores por parámetros
AP50T03GJ
Datasheet (PDF)
..1. Size:98K ape
ap50t03gh ap50t03gj.pdf 
AP50T03GH/JRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30VD Low On-resistance RDS(ON) 16m Fast Switching Characteristic ID 37AGSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,GDSruggedized device design, low on-
9.1. Size:94K ape
ap50t10gm-hf.pdf 
AP50T10GM-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low Gate Charge D BVDSS 100V Single Drive Requirement RDS(ON) 30m Surface Mount Package ID 6.5AG Halogen Free & RoHS Compliant ProductSDDDescriptionDDAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,
9.2. Size:58K ape
ap50t10gi-hf.pdf 
AP50T10GI-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower Gate Charge RDS(ON) 30m Fast Switching Characteristic ID 21.8AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide the designer with thebest combination of fast switching, ruggediz
9.3. Size:165K ape
ap50t10agi.pdf 
AP50T10AGI-HFHalogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V RDS(ON) 33m Lower Gate Charge Fast Switching Characteristic ID 34AG RoHS Compliant & Halogen-FreeSDescriptionAP50T10A series are from Advanced Power innova
9.4. Size:56K ape
ap50t10agi-hf.pdf 
AP50T10AGI-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower Gate Charge RDS(ON) 33m Fast Switching Characteristic ID 34AG RoHS Compliant & Halogen-FreeSDescriptionAP50T10A series are from Advanced Power innovated designand silicon process technology to achieve the lowes
9.5. Size:201K ape
ap50t10gh.pdf 
AP50T10GH/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower Gate Charge RDS(ON) 30m Fast Switching Characteristic ID 37AG RoHS Compliant & Halogen-FreeSDescriptionAP50T10 series are from Advanced Power innovated design andGDSTO-252(H)silicon process technology
9.6. Size:172K ape
ap50t10gi.pdf 
AP50T10GI-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower Gate Charge RDS(ON) 30m Fast Switching Characteristic ID 21.8AG RoHS Compliant & Halogen-FreeSDescriptionAP50T10 series are from Advanced Power innovated design andsilicon process technology to achieve the lowes
9.7. Size:167K ape
ap50t10gs.pdf 
AP50T10GS-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower Gate Charge RDS(ON) 30m Fast Switching Characteristic ID 37AG RoHS Compliant & Halogen-FreeSDescriptionAP50T10 series are from Advanced Power innovated designand silicon process technology to achieve the lowest
9.8. Size:202K ape
ap50t10gh-hf ap50t10gj-hf.pdf 
AP50T10GH/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower Gate Charge RDS(ON) 30m Fast Switching Characteristic ID 37AG RoHS Compliant & Halogen-FreeSDescriptionAP50T10 series are from Advanced Power innovated design andGDSTO-252(H)silicon process technology
9.9. Size:94K ape
ap50t10gp-hf.pdf 
AP50T10GP-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower Gate Charge RDS(ON) 30m Fast Switching Characteristic ID 37AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,ruggedize
9.10. Size:97K ape
ap50t10gh j-hf.pdf 
AP50T10GH/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower Gate Charge RDS(ON) 30m Fast Switching Characteristic ID 37AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide the GDSTO-252(H)designer with the best combination of fast
9.11. Size:165K ape
ap50t10gj.pdf 
AP50T10GH/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower Gate Charge RDS(ON) 30m Fast Switching Characteristic ID 37AG RoHS Compliant & Halogen-FreeSDescriptionAP50T10 series are from Advanced Power innovated design andGDSTO-252(H)silicon process technology
9.12. Size:94K ape
ap50t10gs-hf.pdf 
AP50T10GS-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower Gate Charge RDS(ON) 30m Fast Switching Characteristic ID 37AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,GDrug
9.13. Size:145K ape
ap50t10gp.pdf 
AP50T10GP-HFHalogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V RDS(ON) 30m Lower Gate Charge Fast Switching Characteristic ID 37AG RoHS Compliant & Halogen-FreeSDescriptionAP50T10 series are from Advanced Power innovate
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History: IXTP50N28T
| 3SK249