AP50T03GJ Todos los transistores

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 ap50t03gh ap50t03gj.pdf

AP50T03GH/J RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30V D Low On-resistance RDS(ON) 16m Fast Switching Characteristic ID 37A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, G D S ruggedized device design, low on-

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 ap50t10gm-hf.pdf

AP50T10GM-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge D BVDSS 100V Single Drive Requirement RDS(ON) 30m Surface Mount Package ID 6.5A G Halogen Free & RoHS Compliant Product S D D Description D D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,

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 ap50t10gi-hf.pdf

AP50T10GI-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower Gate Charge RDS(ON) 30m Fast Switching Characteristic ID 21.8A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggediz

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 ap50t10agi.pdf

AP50T10AGI-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V RDS(ON) 33m Lower Gate Charge Fast Switching Characteristic ID 34A G RoHS Compliant & Halogen-Free S Description AP50T10A series are from Advanced Power innova

 9.4. Size:56K  ape
 ap50t10agi-hf.pdf

AP50T10AGI-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower Gate Charge RDS(ON) 33m Fast Switching Characteristic ID 34A G RoHS Compliant & Halogen-Free S Description AP50T10A series are from Advanced Power innovated design and silicon process technology to achieve the lowes

 9.5. Size:201K  ape
 ap50t10gh.pdf

AP50T10GH/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower Gate Charge RDS(ON) 30m Fast Switching Characteristic ID 37A G RoHS Compliant & Halogen-Free S Description AP50T10 series are from Advanced Power innovated design and G D S TO-252(H) silicon process technology

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 ap50t10gi.pdf

AP50T10GI-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower Gate Charge RDS(ON) 30m Fast Switching Characteristic ID 21.8A G RoHS Compliant & Halogen-Free S Description AP50T10 series are from Advanced Power innovated design and silicon process technology to achieve the lowes

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 ap50t10gs.pdf

AP50T10GS-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower Gate Charge RDS(ON) 30m Fast Switching Characteristic ID 37A G RoHS Compliant & Halogen-Free S Description AP50T10 series are from Advanced Power innovated design and silicon process technology to achieve the lowest

 9.8. Size:202K  ape
 ap50t10gh-hf ap50t10gj-hf.pdf

AP50T10GH/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower Gate Charge RDS(ON) 30m Fast Switching Characteristic ID 37A G RoHS Compliant & Halogen-Free S Description AP50T10 series are from Advanced Power innovated design and G D S TO-252(H) silicon process technology

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 ap50t10gp-hf.pdf

AP50T10GP-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower Gate Charge RDS(ON) 30m Fast Switching Characteristic ID 37A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedize

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 ap50t10gh j-hf.pdf

AP50T10GH/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower Gate Charge RDS(ON) 30m Fast Switching Characteristic ID 37A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the G D S TO-252(H) designer with the best combination of fast

 9.11. Size:165K  ape
 ap50t10gj.pdf

AP50T10GH/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower Gate Charge RDS(ON) 30m Fast Switching Characteristic ID 37A G RoHS Compliant & Halogen-Free S Description AP50T10 series are from Advanced Power innovated design and G D S TO-252(H) silicon process technology

 9.12. Size:94K  ape
 ap50t10gs-hf.pdf

AP50T10GS-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower Gate Charge RDS(ON) 30m Fast Switching Characteristic ID 37A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, G D rug

 9.13. Size:145K  ape
 ap50t10gp.pdf

AP50T10GP-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V RDS(ON) 30m Lower Gate Charge Fast Switching Characteristic ID 37A G RoHS Compliant & Halogen-Free S Description AP50T10 series are from Advanced Power innovate