AP50T03GJ PDF and Equivalents Search

 

AP50T03GJ Specs and Replacement

Type Designator: AP50T03GJ

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 34.7 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 37 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 75 nS

Cossⓘ - Output Capacitance: 180 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.016 Ohm

Package: TO251

AP50T03GJ substitution

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AP50T03GJ datasheet

 ..1. Size:98K  ape
ap50t03gh ap50t03gj.pdf pdf_icon

AP50T03GJ

AP50T03GH/J RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30V D Low On-resistance RDS(ON) 16m Fast Switching Characteristic ID 37A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, G D S ruggedized device design, low on-... See More ⇒

 9.1. Size:94K  ape
ap50t10gm-hf.pdf pdf_icon

AP50T03GJ

AP50T10GM-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge D BVDSS 100V Single Drive Requirement RDS(ON) 30m Surface Mount Package ID 6.5A G Halogen Free & RoHS Compliant Product S D D Description D D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,... See More ⇒

 9.2. Size:58K  ape
ap50t10gi-hf.pdf pdf_icon

AP50T03GJ

AP50T10GI-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower Gate Charge RDS(ON) 30m Fast Switching Characteristic ID 21.8A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggediz... See More ⇒

 9.3. Size:165K  ape
ap50t10agi.pdf pdf_icon

AP50T03GJ

AP50T10AGI-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V RDS(ON) 33m Lower Gate Charge Fast Switching Characteristic ID 34A G RoHS Compliant & Halogen-Free S Description AP50T10A series are from Advanced Power innova... See More ⇒

Detailed specifications: AP4800AGM, AP4816GSM, AP4835GM-HF, AP4880GEM, AP4953GM, AP4955GM-HF, AP4957AGM-HF, AP50T03GH, 2N7002, AP5523GM-HF, AP9575GH, AP9575GI, AP9575GJ, AP9575GM-HF, AP9576GM-HF, AP9577GI-HF, AP9578GI-HF

Keywords - AP50T03GJ MOSFET specs

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