AP9412AGM Todos los transistores

 

AP9412AGM MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP9412AGM

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2.5 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 16 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 5 nS

Cossⓘ - Capacitancia de salida: 435 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.006 Ohm

Encapsulados: SO8

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AP9412AGM datasheet

 ..1. Size:93K  ape
 ap9412agm.pdf pdf_icon

AP9412AGM

AP9412AGM RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30V D D Ultra_Low On-resistance RDS(ON) 6m D D Fast Switching Characteristic ID 16A G S S S SO-8 Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized devic

 0.1. Size:94K  ape
 ap9412agm-hf.pdf pdf_icon

AP9412AGM

AP9412AGM-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30V D D Ultra_Low On-resistance RDS(ON) 6m D D Fast Switching Characteristic ID 16A G RoHS Compliant & Halogen-Free S S S SO-8 Description D Advanced Power MOSFETs from APEC provide the designer with the best combination o

 6.1. Size:61K  ape
 ap9412agp.pdf pdf_icon

AP9412AGM

AP9412AGP RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Lower Gate Charge BVDSS 30V Simple Drive Requirement RDS(ON) 6m Fast Switching Characteristic ID 68A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance an

 6.2. Size:118K  ape
 ap9412agi.pdf pdf_icon

AP9412AGM

AP9412AGI RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Fast Switching Performance BVDSS 30V D Single Drive Requirement RDS(ON) 6m Full Isolation Package ID 68A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance

MOSTRAR MÁS

Otros transistores... AP60T03AS , AP60T03GJ , AP60T10GP-HF , AP60T10GS-HF , AP60U02GH , AP60U03GH , AP62T02GJ , AP9410GM-HF , IRFP250 , AP9412BGM , AP9435GJ-HF , AP9435GM , AP9435GP-HF , AP9450GMT-HF , AP9468GM-HF , AP9474GM-HF , AP9477GM .

History: AP85T08GP | AP9561GM-HF | APTM100A23SCTG | CJL2013 | IRFS244B | 2SK3272-01SJ | AP4423GM

 

 

 

 

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