AP9412AGM PDF and Equivalents Search

 

AP9412AGM Specs and Replacement

Type Designator: AP9412AGM

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 16 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 5 nS

Cossⓘ - Output Capacitance: 435 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm

Package: SO8

AP9412AGM substitution

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AP9412AGM datasheet

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 ap9412agm.pdf pdf_icon

AP9412AGM

AP9412AGM RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30V D D Ultra_Low On-resistance RDS(ON) 6m D D Fast Switching Characteristic ID 16A G S S S SO-8 Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized devic... See More ⇒

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 ap9412agm-hf.pdf pdf_icon

AP9412AGM

AP9412AGM-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30V D D Ultra_Low On-resistance RDS(ON) 6m D D Fast Switching Characteristic ID 16A G RoHS Compliant & Halogen-Free S S S SO-8 Description D Advanced Power MOSFETs from APEC provide the designer with the best combination o... See More ⇒

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 ap9412agp.pdf pdf_icon

AP9412AGM

AP9412AGP RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Lower Gate Charge BVDSS 30V Simple Drive Requirement RDS(ON) 6m Fast Switching Characteristic ID 68A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance an... See More ⇒

 6.2. Size:118K  ape
 ap9412agi.pdf pdf_icon

AP9412AGM

AP9412AGI RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Fast Switching Performance BVDSS 30V D Single Drive Requirement RDS(ON) 6m Full Isolation Package ID 68A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance ... See More ⇒

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Detailed specifications: AP60T03AS, AP60T03GJ, AP60T10GP-HF, AP60T10GS-HF, AP60U02GH, AP60U03GH, AP62T02GJ, AP9410GM-HF, IRFP250, AP9412BGM, AP9435GJ-HF, AP9435GM, AP9435GP-HF, AP9450GMT-HF, AP9468GM-HF, AP9474GM-HF, AP9477GM

Keywords - AP9412AGM MOSFET specs

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