IRFIBE20G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: IRFIBE20G
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 30 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 800 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 1.4 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 38(max) nC
   trⓘ - Tiempo de subida: 17 nS
   Cossⓘ - Capacitancia de salida: 150 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 6.5 Ohm
   Paquete / Cubierta: TO220F

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IRFIBE20G Datasheet (PDF)

..1. Size:168K international rectifier
irfibe20g.pdf

..2. Size:972K international rectifier
irfibe20gpbf.pdf

PD- 95648IRFIBE20GPbF Lead-Free7/26/04Document Number: 91183 www.vishay.com1IRFIBE20GPbFDocument Number: 91183 www.vishay.com2IRFIBE20GPbFDocument Number: 91183 www.vishay.com3IRFIBE20GPbFDocument Number: 91183 www.vishay.com4IRFIBE20GPbFDocument Number: 91183 www.vishay.com5IRFIBE20GPbFDocument Number: 91183 www.vishay.com6IRFIBE20GPbFPeak D

..3. Size:1534K vishay
irfibe20g sihfibe20g.pdf

IRFIBE20G, SiHFIBE20GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 800Available High Voltage Isolation = 2.5 kVRMS (t = 60 s;RDS(on) ()VGS = 10 V 6.5f = 60 Hz)RoHS*Qg (Max.) (nC) 38COMPLIANT Sink to Lead Creepage Distance = 4.8 mmQgs (nC) 5.0 Dynamic dV/dt RatingQgd (nC) 21 Low Thermal ResistanceConfiguration

..4. Size:275K inchange semiconductor
irfibe20g.pdf

iscN-Channel MOSFET Transistor IRFIBE20GFEATURESLow drain-source on-resistance:RDS(ON) =6.5 (MAX)Enhancement mode:Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE

8.1. Size:867K international rectifier
irfibe30g.pdf

PD- 95649IRFIBE30GPbF Lead-Free7/26/04Document Number: 91184 www.vishay.com1IRFIBE30GPbFDocument Number: 91184 www.vishay.com2IRFIBE30GPbFDocument Number: 91184 www.vishay.com3IRFIBE30GPbFDocument Number: 91184 www.vishay.com4IRFIBE30GPbFDocument Number: 91184 www.vishay.com5IRFIBE30GPbFPeak Diode Recovery dv/dt Test Circuit+Circuit Layout Consi

8.2. Size:1395K vishay
irfibe30g sihfibe30g.pdf

IRFIBE30G, SiHFIBE30GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 800Available High Voltage Isolation = 2.5 kVRMS (t = 60 s;RDS(on) ()VGS = 10 V 3.0f = 60 Hz)RoHS*Qg (Max.) (nC) 78COMPLIANT Sink to Lead Creepage Distance = 4.8 mmQgs (nC) 9.6 Dynamic dV/dt RatingQgd (nC) 45 Low Thermal ResistanceConfiguration

8.3. Size:275K inchange semiconductor
irfibe30g.pdf

iscN-Channel MOSFET Transistor IRFIBE30GFEATURESLow drain-source on-resistance:RDS(ON) =3.0 (MAX)Enhancement mode:Vth = 2 to 4V (VDS = 10 V, ID=0.25mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNI

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