IRFIBE20G Todos los transistores

 ..1. Size:168K  international rectifier
 irfibe20g.pdf

 ..2. Size:972K  international rectifier
 irfibe20gpbf.pdf

PD- 95648 IRFIBE20GPbF Lead-Free 7/26/04 Document Number 91183 www.vishay.com 1 IRFIBE20GPbF Document Number 91183 www.vishay.com 2 IRFIBE20GPbF Document Number 91183 www.vishay.com 3 IRFIBE20GPbF Document Number 91183 www.vishay.com 4 IRFIBE20GPbF Document Number 91183 www.vishay.com 5 IRFIBE20GPbF Document Number 91183 www.vishay.com 6 IRFIBE20GPbF Peak D

 ..3. Size:1534K  vishay
 irfibe20g sihfibe20g.pdf

IRFIBE20G, SiHFIBE20G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 800 Available High Voltage Isolation = 2.5 kVRMS (t = 60 s; RDS(on) ( )VGS = 10 V 6.5 f = 60 Hz) RoHS* Qg (Max.) (nC) 38 COMPLIANT Sink to Lead Creepage Distance = 4.8 mm Qgs (nC) 5.0 Dynamic dV/dt Rating Qgd (nC) 21 Low Thermal Resistance Configuration

 ..4. Size:275K  inchange semiconductor
 irfibe20g.pdf

iscN-Channel MOSFET Transistor IRFIBE20G FEATURES Low drain-source on-resistance RDS(ON) =6.5 (MAX) Enhancement mode Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE

 8.1. Size:867K  international rectifier
 irfibe30g.pdf

PD- 95649 IRFIBE30GPbF Lead-Free 7/26/04 Document Number 91184 www.vishay.com 1 IRFIBE30GPbF Document Number 91184 www.vishay.com 2 IRFIBE30GPbF Document Number 91184 www.vishay.com 3 IRFIBE30GPbF Document Number 91184 www.vishay.com 4 IRFIBE30GPbF Document Number 91184 www.vishay.com 5 IRFIBE30GPbF Peak Diode Recovery dv/dt Test Circuit + Circuit Layout Consi

 8.2. Size:1395K  vishay
 irfibe30g sihfibe30g.pdf

IRFIBE30G, SiHFIBE30G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 800 Available High Voltage Isolation = 2.5 kVRMS (t = 60 s; RDS(on) ( )VGS = 10 V 3.0 f = 60 Hz) RoHS* Qg (Max.) (nC) 78 COMPLIANT Sink to Lead Creepage Distance = 4.8 mm Qgs (nC) 9.6 Dynamic dV/dt Rating Qgd (nC) 45 Low Thermal Resistance Configuration

 8.3. Size:275K  inchange semiconductor
 irfibe30g.pdf

iscN-Channel MOSFET Transistor IRFIBE30G FEATURES Low drain-source on-resistance RDS(ON) =3.0 (MAX) Enhancement mode Vth = 2 to 4V (VDS = 10 V, ID=0.25mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNI