All MOSFET. IRFIBE20G Datasheet

 

IRFIBE20G MOSFET. Datasheet pdf. Equivalent

Type Designator: IRFIBE20G

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 30 W

Maximum Drain-Source Voltage |Vds|: 800 V

Maximum Gate-Source Voltage |Vgs|: 10 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 1.4 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 38 nC

Maximum Drain-Source On-State Resistance (Rds): 6.5 Ohm

Package: TO220

IRFIBE20G Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRFIBE20G Datasheet (PDF)

1.1. irfibe20gpbf.pdf Size:972K _international_rectifier

IRFIBE20G IRFIBE20G

PD- 95648 IRFIBE20GPbF Lead-Free 7/26/04 Document Number: 91183 www.vishay.com 1 IRFIBE20GPbF Document Number: 91183 www.vishay.com 2 IRFIBE20GPbF Document Number: 91183 www.vishay.com 3 IRFIBE20GPbF Document Number: 91183 www.vishay.com 4 IRFIBE20GPbF Document Number: 91183 www.vishay.com 5 IRFIBE20GPbF Document Number: 91183 www.vishay.com 6 IRFIBE20GPbF Peak Diode

1.2. irfibe20g.pdf Size:168K _international_rectifier

IRFIBE20G IRFIBE20G

 1.3. irfibe20g sihfibe20g.pdf Size:1534K _vishay

IRFIBE20G IRFIBE20G

IRFIBE20G, SiHFIBE20G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 800 Available High Voltage Isolation = 2.5 kVRMS (t = 60 s; RDS(on) (?)VGS = 10 V 6.5 f = 60 Hz) RoHS* Qg (Max.) (nC) 38 COMPLIANT Sink to Lead Creepage Distance = 4.8 mm Qgs (nC) 5.0 Dynamic dV/dt Rating Qgd (nC) 21 Low Thermal Resistance Configuration Single Lead

Datasheet: IRFI9Z34N , IRFIB5N65A , IRFIB6N60A , IRFIB7N50A , IRFIBC20G , IRFIBC30G , IRFIBC40G , IRFIBC40GLC , IRF540N , IRFIBE30G , IRFIBF20G , IRFIBF30G , IRFIZ14A , IRFIZ24A , IRFIZ24E , IRFIZ24N , IRFIZ34A .

 

 
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