Справочник MOSFET. IRFIBE20G

 

IRFIBE20G MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: IRFIBE20G
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 30 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 800 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 1.4 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 38(max) nC
   trⓘ - Время нарастания: 17 ns
   Cossⓘ - Выходная емкость: 150 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 6.5 Ohm
   Тип корпуса: TO220F

 Аналог (замена) для IRFIBE20G

 

 

IRFIBE20G Datasheet (PDF)

 ..1. Size:168K  international rectifier
 irfibe20g.pdf

IRFIBE20G IRFIBE20G

 ..2. Size:972K  international rectifier
 irfibe20gpbf.pdf

IRFIBE20G IRFIBE20G

PD- 95648IRFIBE20GPbF Lead-Free7/26/04Document Number: 91183 www.vishay.com1IRFIBE20GPbFDocument Number: 91183 www.vishay.com2IRFIBE20GPbFDocument Number: 91183 www.vishay.com3IRFIBE20GPbFDocument Number: 91183 www.vishay.com4IRFIBE20GPbFDocument Number: 91183 www.vishay.com5IRFIBE20GPbFDocument Number: 91183 www.vishay.com6IRFIBE20GPbFPeak D

 ..3. Size:1534K  vishay
 irfibe20g sihfibe20g.pdf

IRFIBE20G IRFIBE20G

IRFIBE20G, SiHFIBE20GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 800Available High Voltage Isolation = 2.5 kVRMS (t = 60 s;RDS(on) ()VGS = 10 V 6.5f = 60 Hz)RoHS*Qg (Max.) (nC) 38COMPLIANT Sink to Lead Creepage Distance = 4.8 mmQgs (nC) 5.0 Dynamic dV/dt RatingQgd (nC) 21 Low Thermal ResistanceConfiguration

 ..4. Size:275K  inchange semiconductor
 irfibe20g.pdf

IRFIBE20G IRFIBE20G

iscN-Channel MOSFET Transistor IRFIBE20GFEATURESLow drain-source on-resistance:RDS(ON) =6.5 (MAX)Enhancement mode:Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE

 8.1. Size:867K  international rectifier
 irfibe30g.pdf

IRFIBE20G IRFIBE20G

PD- 95649IRFIBE30GPbF Lead-Free7/26/04Document Number: 91184 www.vishay.com1IRFIBE30GPbFDocument Number: 91184 www.vishay.com2IRFIBE30GPbFDocument Number: 91184 www.vishay.com3IRFIBE30GPbFDocument Number: 91184 www.vishay.com4IRFIBE30GPbFDocument Number: 91184 www.vishay.com5IRFIBE30GPbFPeak Diode Recovery dv/dt Test Circuit+Circuit Layout Consi

 8.2. Size:1395K  vishay
 irfibe30g sihfibe30g.pdf

IRFIBE20G IRFIBE20G

IRFIBE30G, SiHFIBE30GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 800Available High Voltage Isolation = 2.5 kVRMS (t = 60 s;RDS(on) ()VGS = 10 V 3.0f = 60 Hz)RoHS*Qg (Max.) (nC) 78COMPLIANT Sink to Lead Creepage Distance = 4.8 mmQgs (nC) 9.6 Dynamic dV/dt RatingQgd (nC) 45 Low Thermal ResistanceConfiguration

 8.3. Size:275K  inchange semiconductor
 irfibe30g.pdf

IRFIBE20G IRFIBE20G

iscN-Channel MOSFET Transistor IRFIBE30GFEATURESLow drain-source on-resistance:RDS(ON) =3.0 (MAX)Enhancement mode:Vth = 2 to 4V (VDS = 10 V, ID=0.25mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNI

Другие MOSFET... IRFI9Z34N , IRFIB5N65A , IRFIB6N60A , IRFIB7N50A , IRFIBC20G , IRFIBC30G , IRFIBC40G , IRFIBC40GLC , IRF640 , IRFIBE30G , IRFIBF20G , IRFIBF30G , IRFIZ14A , IRFIZ24A , IRFIZ24E , IRFIZ24N , IRFIZ34A .

 

 

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