IRF3205SPBF Todos los transistores

 

IRF3205SPBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IRF3205SPBF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 200 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 55 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 110 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 101 nS
   Cossⓘ - Capacitancia de salida: 781 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.008 Ohm
   Paquete / Cubierta: TO263
     - Selección de transistores por parámetros

 

IRF3205SPBF Datasheet (PDF)

 ..1. Size:280K  international rectifier
 irf3205spbf irf3205lpbf.pdf pdf_icon

IRF3205SPBF

PD - 95106IRF3205SPbFIRF3205LPbFHEXFET Power MOSFETl Advanced Process Technologyl Ultra Low On-ResistanceDVDSS = 55Vl Dynamic dv/dt Ratingl 175C Operating Temperaturel Fast SwitchingRDS(on) = 8.0mGl Fully Avalanche Ratedl Lead-FreeID = 110ASDescriptinAdvanced HEXFET Power MOSFETs from International Rectifierutilize advanced processing techniques t

 ..2. Size:280K  international rectifier
 irf3205lpbf irf3205spbf.pdf pdf_icon

IRF3205SPBF

PD - 95106IRF3205SPbFIRF3205LPbFHEXFET Power MOSFETl Advanced Process Technologyl Ultra Low On-ResistanceDVDSS = 55Vl Dynamic dv/dt Ratingl 175C Operating Temperaturel Fast SwitchingRDS(on) = 8.0mGl Fully Avalanche Ratedl Lead-FreeID = 110ASDescriptinAdvanced HEXFET Power MOSFETs from International Rectifierutilize advanced processing techniques t

 6.1. Size:160K  international rectifier
 irf3205s.pdf pdf_icon

IRF3205SPBF

PD - 94149IRF3205S/LHEXFET Power MOSFET Advanced Process TechnologyDVDSS = 55V Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 8.0mG Fast Switching Fully Avalanche RatedID = 110A SDescriptionAdvanced HEXFET Power MOSFETs from International Rectifierutilize advanced processing techniques to achieve extremely low on-res

 6.2. Size:206K  inchange semiconductor
 irf3205strlpbf.pdf pdf_icon

IRF3205SPBF

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRF3205STRLPBFDESCRIPTIONDrain Current I =110A@ T =25D CDrain Source Voltage: V = 55V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONS .Designed for high current, high speed switching, switchmode power supplies.ABSOLUTE MAXIMU

MOSTRAR MÁS

Otros transistores... IRF251 , IRF252 , IRF253 , IRF320 , IRF3205A , IRF3205H , IRF3205LPBF , IRF3205PBF , 10N60 , IRF3205ZLPBF , IRF3205ZPBF , IRF3205ZSPBF , IRF321 , IRF322 , IRF323 , IRF3305PBF , IRF330R .

History: IXTP50N28T

 

 
Back to Top

 


 
.