All MOSFET. IRF3205SPBF Datasheet

 

IRF3205SPBF Datasheet and Replacement


   Type Designator: IRF3205SPBF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 200 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 110 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 101 nS
   Cossⓘ - Output Capacitance: 781 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
   Package: TO263
 

 IRF3205SPBF substitution

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IRF3205SPBF Datasheet (PDF)

 ..1. Size:280K  international rectifier
 irf3205spbf irf3205lpbf.pdf pdf_icon

IRF3205SPBF

PD - 95106IRF3205SPbFIRF3205LPbFHEXFET Power MOSFETl Advanced Process Technologyl Ultra Low On-ResistanceDVDSS = 55Vl Dynamic dv/dt Ratingl 175C Operating Temperaturel Fast SwitchingRDS(on) = 8.0mGl Fully Avalanche Ratedl Lead-FreeID = 110ASDescriptinAdvanced HEXFET Power MOSFETs from International Rectifierutilize advanced processing techniques t

 ..2. Size:280K  international rectifier
 irf3205lpbf irf3205spbf.pdf pdf_icon

IRF3205SPBF

PD - 95106IRF3205SPbFIRF3205LPbFHEXFET Power MOSFETl Advanced Process Technologyl Ultra Low On-ResistanceDVDSS = 55Vl Dynamic dv/dt Ratingl 175C Operating Temperaturel Fast SwitchingRDS(on) = 8.0mGl Fully Avalanche Ratedl Lead-FreeID = 110ASDescriptinAdvanced HEXFET Power MOSFETs from International Rectifierutilize advanced processing techniques t

 6.1. Size:160K  international rectifier
 irf3205s.pdf pdf_icon

IRF3205SPBF

PD - 94149IRF3205S/LHEXFET Power MOSFET Advanced Process TechnologyDVDSS = 55V Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 8.0mG Fast Switching Fully Avalanche RatedID = 110A SDescriptionAdvanced HEXFET Power MOSFETs from International Rectifierutilize advanced processing techniques to achieve extremely low on-res

 6.2. Size:885K  cn minos
 irf3205s.pdf pdf_icon

IRF3205SPBF

60V N-Channel Power MOSFETDESCRIPTIONThe IRF3205S uses advanced trench technology toprovide excellent R , low gate charge. It can be usedDS(ON)in a wide variety of applications.ApplicationPower switching applicationHard switched and High frequency circuitsUninterruptible power supplyKEY CHARACTERISTICSV = 60V,I =120ADS DR

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Datasheet: IRF251 , IRF252 , IRF253 , IRF320 , IRF3205A , IRF3205H , IRF3205LPBF , IRF3205PBF , IRFP260N , IRF3205ZLPBF , IRF3205ZPBF , IRF3205ZSPBF , IRF321 , IRF322 , IRF323 , IRF3305PBF , IRF330R .

Keywords - IRF3205SPBF MOSFET datasheet

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