IRLMS6702PBF Todos los transistores

 ..1. Size:169K  international rectifier
 irlms6702pbf.pdf

PD - 95224 IRLMS6702PbF HEXFET Power MOSFET l Generation V Technology A 1 6 D D l Micro6 Package Style VDSS = -20V l Ultra Low RDS(on) 2 5 D D l P-Channel MOSFET l Lead-Free 3 4 G S RDS(on) = 0.20 Description Fifth Generation HEXFET power MOSFETs from Top View International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per

 0.1. Size:204K  international rectifier
 irlms6702pbf-1.pdf

IRLMS6702PbF-1 HEXFET Power MOSFET VDS -20 V A 1 6 D D RDS(on) max 0.200 (@V = -4.5V) GS 2 5 D D RDS(on) max 0.375 (@V = -2.7V) GS 3 4 G S Qg (typical) 5.8 nC Micro6 ID Top View -2.4 A (@T = 25 C) A Features Benefits Industry-standard pinout Micro-6 Package Multi-Vendor Compatibility Compatible with Existing Surface Mount Techniques Easier Manufact

 5.1. Size:195K  international rectifier
 irlms6702.pdf

PD - 91414C IRLMS6702 HEXFET Power MOSFET l Generation V Technology A 1 6 D D l Micro6 Package Style VDSS = -20V l Ultra Low RDS(on) 2 5 D D l P-Channel MOSFET 3 4 G S RDS(on) = 0.20 Description Fifth Generation HEXFET power MOSFETs from Top View International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. T

 8.1. Size:148K  international rectifier
 irlms6802pbf.pdf

PD- 94897 IRLMS6802PbF HEXFET Power MOSFET l Ultra Low On-Resistance A 1 6 l P-Channel MOSFET D D VDSS = -20V l Surface Mount 2 5 D D l Available in Tape & Reel l Lead-Free 3 4 G S RDS(on) = 0.050 Top View Description These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Thi

 8.2. Size:91K  international rectifier
 irlms6802.pdf

PD- 91848E IRLMS6802 HEXFET Power MOSFET l Ultra Low On-Resistance A 1 6 l P-Channel MOSFET D D VDSS = -20V l Surface Mount 2 5 D D l Available in Tape & Reel 3 4 G S RDS(on) = 0.050 Top View Description These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit prov

 8.3. Size:881K  cn vbsemi
 irlms6802trpbf.pdf

IRLMS6802TRPBF www.VBsemi.tw P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Available 0.049 at VGS = - 10 V - 4.8 TrenchFET Power MOSFET - 30 5.1 nC 0.054 at VGS = - 4.5 V - 4.1 APPLICATIONS Load Switch TSOP-6 (4) S Top V iew 1 6 (3) G 3 mm 5 2 3 4 (1, 2, 5, 6) D 2.85 mm