IRLMS6702PBF Datasheet: MOSFET, P-Ch, 20V, 2.4A. Full specification with pinout and replacement list

IRLMS6702PBF Datasheet. Specs and Replacement

Type Designator: IRLMS6702PBF 📄📄

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.7 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 2.4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 20 nS

Cossⓘ - Output Capacitance: 130 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.2 Ohm

Package: SOT26

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IRLMS6702PBF substitution

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IRLMS6702PBF datasheet

..1. Size:169K international rectifier
irlms6702pbf.pdf pdf_icon

PD - 95224 IRLMS6702PbF HEXFET Power MOSFET l Generation V Technology A 1 6 D D l Micro6 Package Style VDSS = -20V l Ultra Low RDS(on) 2 5 D D l P-Channel MOSFET l Lead-Free 3 4 G S RDS(on) = 0.20 Description Fifth Generation HEXFET power MOSFETs from Top View International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per ... See More ⇒

0.1. Size:204K international rectifier
irlms6702pbf-1.pdf pdf_icon

IRLMS6702PbF-1 HEXFET Power MOSFET VDS -20 V A 1 6 D D RDS(on) max 0.200 (@V = -4.5V) GS 2 5 D D RDS(on) max 0.375 (@V = -2.7V) GS 3 4 G S Qg (typical) 5.8 nC Micro6 ID Top View -2.4 A (@T = 25 C) A Features Benefits Industry-standard pinout Micro-6 Package Multi-Vendor Compatibility Compatible with Existing Surface Mount Techniques Easier Manufact... See More ⇒

5.1. Size:195K international rectifier
irlms6702.pdf pdf_icon

PD - 91414C IRLMS6702 HEXFET Power MOSFET l Generation V Technology A 1 6 D D l Micro6 Package Style VDSS = -20V l Ultra Low RDS(on) 2 5 D D l P-Channel MOSFET 3 4 G S RDS(on) = 0.20 Description Fifth Generation HEXFET power MOSFETs from Top View International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. T... See More ⇒

8.1. Size:148K international rectifier
irlms6802pbf.pdf pdf_icon

PD- 94897 IRLMS6802PbF HEXFET Power MOSFET l Ultra Low On-Resistance A 1 6 l P-Channel MOSFET D D VDSS = -20V l Surface Mount 2 5 D D l Available in Tape & Reel l Lead-Free 3 4 G S RDS(on) = 0.050 Top View Description These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Thi... See More ⇒