IRF1607PBF MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

IRF1607PBF datasheet

..1. Size:256K international rectifier
irf1607pbf.pdf pdf_icon

PD -95487A IRF1607PbF Typical Applications HEXFET Power MOSFET Industrial Motor Drive D VDSS = 75V Benefits Ultra Low On-Resistance RDS(on) = 0.0075 Dynamic dv/dt Rating G 175 C Operating Temperature Fast Switching ID = 142A S Repetitive Avalanche Allowed up to Tjmax Lead-Free Description This Stripe Planar design of HEXFET Power MOSFETs utilizes the lastes

7.1. Size:234K international rectifier
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PD -94158 AUTOMOTIVE MOSFET IRF1607 Typical Applications HEXFET Power MOSFET 42 Volts Automotive Electrical Systems D Electrical Power Steering (EPS) VDSS = 75V Integrated Starter Alternator Benefits Ultra Low On-Resistance RDS(on) = 0.0075 Dynamic dv/dt Rating G 175 C Operating Temperature ID = 142AV Fast Switching S Repetitive Avalanche Allowed up to Tjmax A

7.2. Size:245K inchange semiconductor
irf1607.pdf pdf_icon

isc N-Channel MOSFET Transistor IRF1607 IIRF1607 FEATURES Static drain-source on-resistance RDS(on) 7.5m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYM

9.1. Size:1604K cn sps
smirf16n65.pdf pdf_icon

SMIRF16N65 30V /36A Single N Power MOSFET N-Channel Enhancement Mode Power MOSFET Description ID 16A SMIRF12N65 is an N-channel enhancement mode power MOS field effect transistor. The improved VDSS 650V planar stripe cell and the improved guard ring terminal have been especially tailored to minimize Rdson max 0.6 (VGS=10V, ID=8A) on-state resistance, provide superior

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