All MOSFET. IRF1607PBF Datasheet

 

IRF1607PBF Datasheet and Replacement


   Type Designator: IRF1607PBF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 380 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 75 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 142 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 130 nS
   Cossⓘ - Output Capacitance: 1230 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0075 Ohm
   Package: TO220AB
 

 IRF1607PBF substitution

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IRF1607PBF Datasheet (PDF)

 ..1. Size:256K  international rectifier
irf1607pbf.pdf pdf_icon

IRF1607PBF

PD -95487AIRF1607PbFTypical ApplicationsHEXFET Power MOSFET Industrial Motor DriveDVDSS = 75VBenefits Ultra Low On-ResistanceRDS(on) = 0.0075 Dynamic dv/dt RatingG 175C Operating Temperature Fast SwitchingID = 142AS Repetitive Avalanche Allowed up to Tjmax Lead-FreeDescriptionThis Stripe Planar design of HEXFET Power MOSFETsutilizes the lastes

 7.1. Size:234K  international rectifier
irf1607.pdf pdf_icon

IRF1607PBF

PD -94158AUTOMOTIVE MOSFETIRF1607Typical ApplicationsHEXFET Power MOSFET 42 Volts Automotive Electrical SystemsD Electrical Power Steering (EPS)VDSS = 75V Integrated Starter AlternatorBenefits Ultra Low On-ResistanceRDS(on) = 0.0075 Dynamic dv/dt RatingG 175C Operating TemperatureID = 142AV Fast SwitchingS Repetitive Avalanche Allowed up to Tjmax A

 7.2. Size:245K  inchange semiconductor
irf1607.pdf pdf_icon

IRF1607PBF

isc N-Channel MOSFET Transistor IRF1607IIRF1607FEATURESStatic drain-source on-resistance:RDS(on) 7.5mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYM

 9.1. Size:1604K  cn sps
smirf16n65.pdf pdf_icon

IRF1607PBF

SMIRF16N6530V /36A Single N Power MOSFET N-Channel Enhancement Mode Power MOSFETDescription ID 16A SMIRF12N65 is an N-channel enhancement mode power MOS field effect transistor. The improved VDSS 650V planar stripe cell and the improved guard ring terminal have been especially tailored to minimize Rdson max 0.6(VGS=10V, ID=8A) on-state resistance, provide superior

Datasheet: IRLMS6802PBF , IRF1503L , IRF1503LPBF , IRF1503PBF , IRF1503SPBF , IRF150B , IRF150C , IRF150SMD , IRF730 , IRF1704 , IRF1902PBF , IRF200B211 , IRLL2705PBF , IRLL3303PBF , IRLL014NPBF , IRLL014PBF , IRLL024NPBF .

Keywords - IRF1607PBF MOSFET datasheet

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