IRF1607PBF Datasheet. Specs and Replacement

Type Designator: IRF1607PBF  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 380 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 75 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 142 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 130 nS

Cossⓘ - Output Capacitance: 1230 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0075 Ohm

Package: TO220AB

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IRF1607PBF substitution

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IRF1607PBF datasheet

 ..1. Size:256K  international rectifier
 irf1607pbf.pdf pdf_icon

IRF1607PBF

PD -95487A IRF1607PbF Typical Applications HEXFET Power MOSFET Industrial Motor Drive D VDSS = 75V Benefits Ultra Low On-Resistance RDS(on) = 0.0075 Dynamic dv/dt Rating G 175 C Operating Temperature Fast Switching ID = 142A S Repetitive Avalanche Allowed up to Tjmax Lead-Free Description This Stripe Planar design of HEXFET Power MOSFETs utilizes the lastes... See More ⇒

 7.1. Size:234K  international rectifier
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IRF1607PBF

PD -94158 AUTOMOTIVE MOSFET IRF1607 Typical Applications HEXFET Power MOSFET 42 Volts Automotive Electrical Systems D Electrical Power Steering (EPS) VDSS = 75V Integrated Starter Alternator Benefits Ultra Low On-Resistance RDS(on) = 0.0075 Dynamic dv/dt Rating G 175 C Operating Temperature ID = 142AV Fast Switching S Repetitive Avalanche Allowed up to Tjmax A... See More ⇒

 7.2. Size:245K  inchange semiconductor
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IRF1607PBF

isc N-Channel MOSFET Transistor IRF1607 IIRF1607 FEATURES Static drain-source on-resistance RDS(on) 7.5m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYM... See More ⇒

 9.1. Size:1604K  cn sps
 smirf16n65.pdf pdf_icon

IRF1607PBF

SMIRF16N65 30V /36A Single N Power MOSFET N-Channel Enhancement Mode Power MOSFET Description ID 16A SMIRF12N65 is an N-channel enhancement mode power MOS field effect transistor. The improved VDSS 650V planar stripe cell and the improved guard ring terminal have been especially tailored to minimize Rdson max 0.6 (VGS=10V, ID=8A) on-state resistance, provide superior ... See More ⇒

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Detailed specifications: IRLMS6802PBF, IRF1503L, IRF1503LPBF, IRF1503PBF, IRF1503SPBF, IRF150B, IRF150C, IRF150SMD, IRFB31N20D, IRF1704, IRF1902PBF, IRF200B211, IRLL2705PBF, IRLL3303PBF, IRLL014NPBF, IRLL014PBF, IRLL024NPBF

Keywords - IRF1607PBF MOSFET specs

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