IRFIZ34N MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRFIZ34N

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 37 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 55 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 21 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 49 nS

Cossⓘ - Capacitancia de salida: 240 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.04 Ohm

Encapsulados: TO220F

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IRFIZ34N datasheet

 ..1. Size:105K  international rectifier
 irfiz34n.pdf pdf_icon

IRFIZ34N

PD - 9.1489A IRFIZ34N HEXFET Power MOSFET Advanced Process Technology D Isolated Package VDSS = 55V High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm RDS(on) = 0.04 Fully Avalanche Rated G ID = 21A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per s

 ..2. Size:265K  international rectifier
 irfiz34npbf.pdf pdf_icon

IRFIZ34N

PD - 94840 IRFIZ34NPbF HEXFET Power MOSFET l Advanced Process Technology D l Isolated Package VDSS = 55V l High Voltage Isolation = 2.5KVRMS l Sink to Lead Creepage Dist. = 4.8mm RDS(on) = 0.04 l Fully Avalanche Rated G l Lead-Free ID = 21A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely l

 ..3. Size:504K  infineon
 irfiz34npbf.pdf pdf_icon

IRFIZ34N

IRFIZ34NPbF Advanced Process Technology HEXFET Power MOSFET Isolated Package High Voltage Isolation = 2.5KVRMS VDSS 55V Sink to Lead Creepage Dist. = 4.8mm RDS(on) 0.04 Fully Avalanche Rated Lead-Free ID 21A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low

 ..4. Size:200K  inchange semiconductor
 irfiz34n.pdf pdf_icon

IRFIZ34N

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IRFIZ34N FEATURES With TO-220F package Low input capacitance and gate charge Low gate input resistance Reduced switching and conduction losses 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T

MOSTRAR MÁS

Otros transistores... IRFIBF20G, IRFIBF30G, IRFIZ14A, IRFIZ24A, IRFIZ24E, IRFIZ24N, IRFIZ34A, IRFIZ34E, IRF3710, IRFIZ44A, IRFIZ44N, IRFIZ46N, IRFIZ48N, IRFL014, IRFL024N, IRFL1006, IRFL110