IRFIZ34N MOSFET. Datasheet pdf. Equivalent
Type Designator: IRFIZ34N
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 31 W
Maximum Drain-Source Voltage |Vds|: 55 V
Maximum Gate-Source Voltage |Vgs|: 10 V
Maximum Drain Current |Id|: 19 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 22.7 nC
Maximum Drain-Source On-State Resistance (Rds): 0.04 Ohm
Package: TO220
IRFIZ34N Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRFIZ34N Datasheet (PDF)
1.1. irfiz34n.pdf 
Size:105K _international_rectifier
PD - 9.1489A IRFIZ34N HEXFET Power MOSFET Advanced Process Technology D Isolated Package VDSS = 55V High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm RDS(on) = 0.04? Fully Avalanche Rated G ID = 21A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon
1.2. irfiz34npbf.pdf Size:265K _international_rectifier
PD - 94840 IRFIZ34NPbF HEXFET® Power MOSFET l Advanced Process Technology D l Isolated Package VDSS = 55V l High Voltage Isolation = 2.5KVRMS … l Sink to Lead Creepage Dist. = 4.8mm RDS(on) = 0.04Ω l Fully Avalanche Rated G l Lead-Free ID = 21A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely l
1.3. irfiz34n.pdf Size:200K _inchange_semiconductor
INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IRFIZ34N ·FEATURES ·With TO-220F package ·Low input capacitance and gate charge ·Low gate input resistance ·Reduced switching and conduction losses ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(T
Datasheet: IRFIBF20G , IRFIBF30G , IRFIZ14A , IRFIZ24A , IRFIZ24E , IRFIZ24N , IRFIZ34A , IRFIZ34E , BUZ11 , IRFIZ44A , IRFIZ44N , IRFIZ46N , IRFIZ48N , IRFL014 , IRFL024N , IRFL1006 , IRFL110 .
