IRFIZ34N MOSFET. Datasheet pdf. Equivalent
Type Designator: IRFIZ34N
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 31 W
Maximum Drain-Source Voltage |Vds|: 55 V
Maximum Gate-Source Voltage |Vgs|: 10 V
Maximum Drain Current |Id|: 19 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 22.7 nC
Maximum Drain-Source On-State Resistance (Rds): 0.04 Ohm
Package: TO220
IRFIZ34N Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRFIZ34N Datasheet (PDF)
1.1. irfiz34npbf.pdf 
Size:265K _international_rectifier
PD - 94840 IRFIZ34NPbF HEXFET® Power MOSFET l Advanced Process Technology D l Isolated Package VDSS = 55V l High Voltage Isolation = 2.5KVRMS … l Sink to Lead Creepage Dist. = 4.8mm RDS(on) = 0.04Ω l Fully Avalanche Rated G l Lead-Free ID = 21A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely l
1.2. irfiz34n.pdf Size:105K _international_rectifier
PD - 9.1489A IRFIZ34N HEXFET Power MOSFET Advanced Process Technology D Isolated Package VDSS = 55V High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm RDS(on) = 0.04? Fully Avalanche Rated G ID = 21A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon
3.1. irfiz34g.pdf Size:273K _international_rectifier
3.2. irfiz34v.pdf Size:105K _international_rectifier
PD - 94053 IRFIZ34V HEXFET Power MOSFET Advanced Process Technology D VDSS = 60V Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating Temperature RDS(on) = 28m? G Fast Switching Fully Avalanche Rated ID = 20A Optimized for SMPS Applications S Description Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve e
3.3. irfiz34g irfiz34gpbf.pdf Size:2985K _international_rectifier
IRFIZ34G, SiHFIZ34G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Isolated Package VDS (V) 60 Available • High Voltage Isolation = 2.5 kVRMS (t = 60 s; RDS(on) (Ω)VGS = 10 V 0.050 f = 60 Hz) RoHS* COMPLIANT • Sink to Lead Creepage Distance = 4.8 mm Qg (Max.) (nC) 46 • 175 °C Operating Temperature Qgs (nC) 11 • Dynamic dV/dt Rating Qgd (nC) 22 • Low T
3.4. irfiz34gpbf.pdf Size:1301K _international_rectifier
PD - 94861 IRFIZ34GPbF Lead-Free 12/03/03 Document Number: 91188 www.vishay.com 1 IRFIZ34GPbF Document Number: 91188 www.vishay.com 2 IRFIZ34GPbF Document Number: 91188 www.vishay.com 3 IRFIZ34GPbF Document Number: 91188 www.vishay.com 4 IRFIZ34GPbF Document Number: 91188 www.vishay.com 5 IRFIZ34GPbF Document Number: 91188 www.vishay.com 6 IRFIZ34GPbF TO-220 Full-Pak
3.5. irfiz34e.pdf Size:114K _international_rectifier
PD - 9.1674A IRFIZ34E HEXFET Power MOSFET Advanced Process Technology D Isolated Package VDSS = 60V High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm RDS(on) = 0.042? Fully Avalanche Rated G ID = 21A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silico
3.6. irfiz34g sihfiz34g.pdf Size:2984K _vishay
IRFIZ34G, SiHFIZ34G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 60 Available High Voltage Isolation = 2.5 kVRMS (t = 60 s; RDS(on) (?)VGS = 10 V 0.050 f = 60 Hz) RoHS* COMPLIANT Sink to Lead Creepage Distance = 4.8 mm Qg (Max.) (nC) 46 175 C Operating Temperature Qgs (nC) 11 Dynamic dV/dt Rating Qgd (nC) 22 Low Thermal Resistance
Datasheet: IRFIBF20G , IRFIBF30G , IRFIZ14A , IRFIZ24A , IRFIZ24E , IRFIZ24N , IRFIZ34A , IRFIZ34E , BUZ11 , IRFIZ44A , IRFIZ44N , IRFIZ46N , IRFIZ48N , IRFL014 , IRFL024N , IRFL1006 , IRFL110 .
