IRFL4310PBF Todos los transistores

 

IRFL4310PBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRFL4310PBF

Código: FL4310

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 1 W

Tensión drenaje-fuente (Vds): 100 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 1.6 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 4 V

Tiempo de elevación (tr): 18 nS

Conductancia de drenaje-sustrato (Cd): 92 pF

Resistencia drenaje-fuente RDS(on): 0.2 Ohm

Empaquetado / Estuche: SOT223

Búsqueda de reemplazo de MOSFET IRFL4310PBF

 

 

IRFL4310PBF Datasheet (PDF)

1.1. irfl4310pbf.pdf Size:659K _international_rectifier

IRFL4310PBF
IRFL4310PBF

PD - 95144 IRFL4310PbF HEXFET® Power MOSFET D Surface Mount VDSS = 100V Dynamic dv/dt Rating Fast Switching Ease of Paralleling RDS(on) = 0.20Ω Advanced Process Technology G Ultra Low On-Resistance ID = 1.6A Lead-Free S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per

2.1. irfl4310.pdf Size:313K _international_rectifier

IRFL4310PBF
IRFL4310PBF

PD - 91368B IRFL4310 HEXFET Power MOSFET D VDSS = 100V l Surface Mount l Dynamic dv/dt Rating l Fast Switching RDS(on) = 0.20W l Ease of Paralleling G l Advanced Process Technology l Ultra Low On-Resistance ID = 1.6A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

 3.1. irfl4315pbf.pdf Size:197K _international_rectifier

IRFL4310PBF
IRFL4310PBF

PD - 95258A IRFL4315PbF HEXFET® Power MOSFET VDSS RDS(on) max ID Applications l High frequency DC-DC converters 150V 185mW@VGS = 10V 2.6A Benefits l Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) SOT-223 l Fully Characterized Avalanche Voltage and Current l Lead-Free Abs

3.2. irfl4315.pdf Size:121K _international_rectifier

IRFL4310PBF
IRFL4310PBF

PD - 94445 IRFL4315 SMPS MOSFET HEXFET Power MOSFET VDSS RDS(on) max ID Applications High frequency DC-DC converters ? 150V 185m? ?@VGS = 10V 2.6A ? ? Benefits Low Gate to Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) SOT-223 Fully Characterized Avalanche Voltage and Current Abs

Otros transistores... NTD70N03R , NTE4151P , NTE4153N , NTF2955 , NTF3055-100 , NTF3055L108 , NTF5P03T3 , NTF6P02 , IRF740 , NTGD3148N , NTGD4161P , NTGD4167C , NTGS3130N , NTGS3136P , NTGS3433 , NTGS3441 , NTGS3443 .

Back to Top

 


IRFL4310PBF
  IRFL4310PBF
  IRFL4310PBF
  IRFL4310PBF
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores:

MOSFET: NVJD4152P | NVGS5120P | NVGS4141N | NVGS4111P | NVGS3443 | NVGS3441 | NVGS3136P | NVGS3130N | NVF6P02 | NVF5P03 | NVF3055L108 | NVF3055-100 | NVF2955 | NVF2201N | NVE4153N |

 

 

Back to Top