All MOSFET. IRFL4310PBF Datasheet

 

IRFL4310PBF MOSFET. Datasheet pdf. Equivalent


   Type Designator: IRFL4310PBF
   Marking Code: FL4310
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 1.6 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 17 nC
   trⓘ - Rise Time: 18 nS
   Cossⓘ - Output Capacitance: 92 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.2 Ohm
   Package: SOT223

 IRFL4310PBF Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRFL4310PBF Datasheet (PDF)

 ..1. Size:659K  international rectifier
 irfl4310pbf.pdf

IRFL4310PBF IRFL4310PBF

PD - 95144IRFL4310PbFHEXFET Power MOSFETD Surface MountVDSS = 100V Dynamic dv/dt Rating Fast Switching Ease of ParallelingRDS(on) = 0.20 Advanced Process TechnologyG Ultra Low On-ResistanceID = 1.6A Lead-FreeSDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per

 ..2. Size:662K  infineon
 irfl4310pbf.pdf

IRFL4310PBF IRFL4310PBF

PD - 95144IRFL4310PbFHEXFET Power MOSFETD Surface MountVDSS = 100V Dynamic dv/dt Rating Fast Switching Ease of ParallelingRDS(on) = 0.20 Advanced Process TechnologyG Ultra Low On-ResistanceID = 1.6A Lead-FreeSDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per

 6.1. Size:313K  international rectifier
 irfl4310.pdf

IRFL4310PBF IRFL4310PBF

PD - 91368BIRFL4310HEXFET Power MOSFETDVDSS = 100Vl Surface Mountl Dynamic dv/dt Ratingl Fast SwitchingRDS(on) = 0.20Wl Ease of ParallelingGl Advanced Process Technologyl Ultra Low On-ResistanceID = 1.6ASDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per silicon ar

 6.2. Size:2332K  cn vbsemi
 irfl4310tr.pdf

IRFL4310PBF IRFL4310PBF

IRFL4310TRwww.VBsemi.twN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) 30 AEC-Q101 QualifiedcRDS(on) () at VGS = 10 V 0.019 100 % Rg and UIS TestedRDS(on) () at VGS = 4.5 V 0.021ID (A) 7Configuration SingleDSOT-223GDSDGSN-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted)PA

 7.1. Size:197K  international rectifier
 irfl4315pbf.pdf

IRFL4310PBF IRFL4310PBF

PD - 95258AIRFL4315PbFHEXFET Power MOSFETVDSS RDS(on) max IDApplicationsl High frequency DC-DC converters150V 185mW@VGS = 10V 2.6ABenefitsl Low Gate to Drain Charge to ReduceSwitching Lossesl Fully Characterized Capacitance Including Effective COSS to Simplify Design, (SeeApp. Note AN1001)SOT-223l Fully Characterized Avalanche Voltageand Currentl Lead-FreeAbs

 7.2. Size:121K  international rectifier
 irfl4315.pdf

IRFL4310PBF IRFL4310PBF

PD - 94445IRFL4315SMPS MOSFETHEXFET Power MOSFETVDSS RDS(on) max IDApplications High frequency DC-DC converters150V 185m@VGS = 10V 2.6ABenefits Low Gate to Drain Charge to ReduceSwitching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, (SeeApp. Note AN1001)SOT-223 Fully Characterized Avalanche Voltagean

 7.3. Size:197K  infineon
 irfl4315pbf.pdf

IRFL4310PBF IRFL4310PBF

PD - 95258AIRFL4315PbFHEXFET Power MOSFETVDSS RDS(on) max IDApplicationsl High frequency DC-DC converters150V 185mW@VGS = 10V 2.6ABenefitsl Low Gate to Drain Charge to ReduceSwitching Lossesl Fully Characterized Capacitance Including Effective COSS to Simplify Design, (SeeApp. Note AN1001)SOT-223l Fully Characterized Avalanche Voltageand Currentl Lead-FreeAbs

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , RFP50N06 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

History: IRFL9014

 

 
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