PD - 95144IRFL4310PbFHEXFET Power MOSFETD Surface MountVDSS = 100V Dynamic dv/dt Rating Fast Switching Ease of ParallelingRDS(on) = 0.20 Advanced Process TechnologyG Ultra Low On-ResistanceID = 1.6A Lead-FreeSDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per

PD - 91368BIRFL4310HEXFET Power MOSFETDVDSS = 100Vl Surface Mountl Dynamic dv/dt Ratingl Fast SwitchingRDS(on) = 0.20Wl Ease of ParallelingGl Advanced Process Technologyl Ultra Low On-ResistanceID = 1.6ASDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per silicon ar

IRFL4310TRwww.VBsemi.twN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) 30 AEC-Q101 QualifiedcRDS(on) () at VGS = 10 V 0.019 100 % Rg and UIS TestedRDS(on) () at VGS = 4.5 V 0.021ID (A) 7Configuration SingleDSOT-223GDSDGSN-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted)PA

PD - 95258AIRFL4315PbFHEXFET Power MOSFETVDSS RDS(on) max IDApplicationsl High frequency DC-DC converters150V 185mW@VGS = 10V 2.6ABenefitsl Low Gate to Drain Charge to ReduceSwitching Lossesl Fully Characterized Capacitance Including Effective COSS to Simplify Design, (SeeApp. Note AN1001)SOT-223l Fully Characterized Avalanche Voltageand Currentl Lead-FreeAbs

PD - 94445IRFL4315SMPS MOSFETHEXFET Power MOSFETVDSS RDS(on) max IDApplications High frequency DC-DC converters150V 185m@VGS = 10V 2.6ABenefits Low Gate to Drain Charge to ReduceSwitching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, (SeeApp. Note AN1001)SOT-223 Fully Characterized Avalanche Voltagean