IRFIZ46N MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRFIZ46N
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 45 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 55 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua
de drenaje: 33 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 80 nS
Cossⓘ - Capacitancia de salida: 450 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.02 Ohm
Encapsulados: TO220F
Búsqueda de reemplazo de IRFIZ46N MOSFET
- Selecciónⓘ de transistores por parámetros
IRFIZ46N datasheet
..1. Size:224K international rectifier
irfiz46npbf.pdf 
PD - 95595 IRFIZ46NPbF HEXFET Power MOSFET l Advanced Process Technology l Isolated Package D l High Voltage Isolation = 2.5KVRMS VDSS = 55V l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated l Lead-Free RDS(on) = 0.020 G Description ID = 33A Fifth Generation HEXFETs from International Rectifier S utilize advanced processing techniques to achieve the lowest
..2. Size:104K international rectifier
irfiz46n.pdf
PD - 9.1306A IRFIZ46N HEXFET Power MOSFET Advanced Process Technology D Isolated Package VDSS = 55V High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated RDS(on) = 0.020 G Description ID = 33A Fifth Generation HEXFETs from International Rectifier S utilize advanced processing techniques to achieve the lowest possible on-resistance
8.2. Size:1443K international rectifier
irfiz48g irfiz48gpbf.pdf
IRFIZ48G, SiHFIZ48G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 60 High Voltage Isolation = 2.5 kVRMS (t = 60 s; Available RDS(on) ( )VGS = 10 V 0.018 f = 60 Hz) RoHS* Qg (Max.) (nC) 110 COMPLIANT Sink to Lead Creepage Distance = 4.8 mm Qgs (nC) 29 175 C Operating Temperature Qgd (nC) 36 Dynamic dV/dt Rating Configura
8.3. Size:93K international rectifier
irfiz48v.pdf
PD-94072 IRFIZ48V HEXFET Power MOSFET Advanced Process Technology D Ultra Low On-Resistance VDSS = 60V Isolated Package High Voltage Isolation = 2.5KVRMS RDS(on) = 12m Fast Switching G Fully Avalanche Rated ID = 39A Optimized for SMPS Applications S Description Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to
8.4. Size:214K international rectifier
irfiz48vpbf.pdf
PD-94834 IRFIZ48VPbF l Advanced Process Technology HEXFET Power MOSFET l Ultra Low On-Resistance D l Isolated Package VDSS = 60V l High Voltage Isolation = 2.5KVRMS l Fast Switching RDS(on) = 12m l Fully Avalanche Rated G l Optimized for SMPS Applications ID = 39A l Lead-Free S Description Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced p
8.6. Size:106K international rectifier
irfiz44n.pdf
PD - 9.1403A IRFIZ44N HEXFET Power MOSFET Advanced Process Technology D Isolated Package VDSS = 55V High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm RDS(on) = 0.024 Fully Avalanche Rated G ID = 31A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per
8.7. Size:1392K international rectifier
irfiz44g irfiz44gpbf.pdf
IRFIZ44G, SiHFIZ44G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 60 Available High Voltage Isolation = 2.5 kVRMS (t = 60 s; RDS(on) ( )VGS = 10 V 0.028 f = 60 Hz) RoHS* Qg (Max.) (nC) 95 COMPLIANT Sink to Lead Creepage Distance = 4.8 mm Qgs (nC) 27 175 C Operating Temperature Qgd (nC) 46 Dynamic dV/dt Rating Configurat
8.8. Size:214K international rectifier
auirfiz44n.pdf
AUTOMOTIVE GRADE PD - 97767 AUIRFIZ44N Features HEXFET Power MOSFET l Advanced Planar Technology l Low On-Resistance V(BR)DSS 55V l Isolated Package l High Voltage Isolation = 2.5KVRMS RDS(on) max. 24m l Sink to Lead Creepage Distantce = 4.8mm l 175 C Operating Temperature ID 31A l Fully Avalanche Rated l Lead-Free, RoHS Compliant l Automotive Qualified* Description S
8.10. Size:265K international rectifier
irfiz44npbf.pdf
PD - 94836 IRFIZ44NPbF HEXFET Power MOSFET l Advanced Process Technology D l Isolated Package VDSS = 55V l High Voltage Isolation = 2.5KVRMS l Sink to Lead Creepage Dist. = 4.8mm RDS(on) = 0.024 l Fully Avalanche Rated G l Lead-Free ID = 31A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely
8.11. Size:109K international rectifier
irfiz48n.pdf
PD 9.1407 IRFIZ48N PRELIMINARY HEXFET Power MOSFET Advanced Process Technology D Isolated Package VDSS = 55V High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm RDS(on) = 0.016 Fully Avalanche Rated G ID = 36A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resis
8.12. Size:270K international rectifier
irfiz48npbf.pdf
PD -94835 IRFIZ48NPbF HEXFET Power MOSFET l Advanced Process Technology D l Isolated Package VDSS = 55V l High Voltage Isolation = 2.5KVRMS l Sink to Lead Creepage Dist. = 4.8mm RDS(on) = 0.016 l Fully Avalanche Rated G l Lead-Free ID = 40A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely l
8.13. Size:1442K vishay
irfiz48g sihfiz48g.pdf
IRFIZ48G, SiHFIZ48G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 60 High Voltage Isolation = 2.5 kVRMS (t = 60 s; Available RDS(on) ( )VGS = 10 V 0.018 f = 60 Hz) RoHS* Qg (Max.) (nC) 110 COMPLIANT Sink to Lead Creepage Distance = 4.8 mm Qgs (nC) 29 175 C Operating Temperature Qgd (nC) 36 Dynamic dV/dt Rating Configura
8.14. Size:1390K vishay
irfiz44g sihfiz44g.pdf
IRFIZ44G, SiHFIZ44G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 60 Available High Voltage Isolation = 2.5 kVRMS (t = 60 s; RDS(on) ( )VGS = 10 V 0.028 f = 60 Hz) RoHS* Qg (Max.) (nC) 95 COMPLIANT Sink to Lead Creepage Distance = 4.8 mm Qgs (nC) 27 175 C Operating Temperature Qgd (nC) 46 Dynamic dV/dt Rating Configurat
8.15. Size:502K infineon
irfiz44npbf.pdf
IRFIZ44NPbF Advanced Process Technology HEXFET Power MOSFET Isolated Package High Voltage Isolation = 2.5KVRMS VDSS 55V Sink to Lead Creepage Dist. = 4.8mm RDS(on) 0.024 Fully Avalanche Rated Lead-Free ID 31A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low
8.16. Size:500K infineon
irfiz48npbf.pdf
IRFIZ48NPbF Advanced Process Technology HEXFET Power MOSFET Isolated Package High Voltage Isolation = 2.5KVRMS VDSS 55V Sink to Lead Creepage Dist. = 4.8mm RDS(on) 0.016 Fully Avalanche Rated Lead-Free ID 40A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low
8.17. Size:275K inchange semiconductor
irfiz48g.pdf
iscN-Channel MOSFET Transistor IRFIZ48G FEATURES Low drain-source on-resistance RDS(ON) 18m @V =10V GS Enhancement mode Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETE
8.18. Size:200K inchange semiconductor
irfiz44n.pdf
INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IRFIZ44N FEATURES With TO-220F package Low input capacitance and gate charge Low gate input resistance Reduced switching and conduction losses 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T
8.19. Size:274K inchange semiconductor
irfiz44g.pdf
iscN-Channel MOSFET Transistor IRFIZ44G FEATURES Low drain-source on-resistance RDS(ON) 28m @V =10V GS Enhancement mode Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETE
8.20. Size:201K inchange semiconductor
irfiz48n.pdf
INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IRFIZ48N FEATURES With TO-220F package Low input capacitance and gate charge Low gate input resistance Reduced switching and conduction losses 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T
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