IRFIZ46N - описание и поиск аналогов

 ..1. Size:224K  international rectifier
 irfiz46npbf.pdf 

PD - 95595 IRFIZ46NPbF HEXFET Power MOSFET l Advanced Process Technology l Isolated Package D l High Voltage Isolation = 2.5KVRMS VDSS = 55V l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated l Lead-Free RDS(on) = 0.020 G Description ID = 33A Fifth Generation HEXFETs from International Rectifier S utilize advanced processing techniques to achieve the lowest

 ..2. Size:104K  international rectifier
 irfiz46n.pdf 

PD - 9.1306A IRFIZ46N HEXFET Power MOSFET Advanced Process Technology D Isolated Package VDSS = 55V High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated RDS(on) = 0.020 G Description ID = 33A Fifth Generation HEXFETs from International Rectifier S utilize advanced processing techniques to achieve the lowest possible on-resistance

 8.1. Size:197K  1
 irfiz44a irfw44a.pdf 

 8.2. Size:1443K  international rectifier
 irfiz48g irfiz48gpbf.pdf 

IRFIZ48G, SiHFIZ48G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 60 High Voltage Isolation = 2.5 kVRMS (t = 60 s; Available RDS(on) ( )VGS = 10 V 0.018 f = 60 Hz) RoHS* Qg (Max.) (nC) 110 COMPLIANT Sink to Lead Creepage Distance = 4.8 mm Qgs (nC) 29 175 C Operating Temperature Qgd (nC) 36 Dynamic dV/dt Rating Configura

 8.3. Size:93K  international rectifier
 irfiz48v.pdf 

PD-94072 IRFIZ48V HEXFET Power MOSFET Advanced Process Technology D Ultra Low On-Resistance VDSS = 60V Isolated Package High Voltage Isolation = 2.5KVRMS RDS(on) = 12m Fast Switching G Fully Avalanche Rated ID = 39A Optimized for SMPS Applications S Description Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to

 8.4. Size:214K  international rectifier
 irfiz48vpbf.pdf 

PD-94834 IRFIZ48VPbF l Advanced Process Technology HEXFET Power MOSFET l Ultra Low On-Resistance D l Isolated Package VDSS = 60V l High Voltage Isolation = 2.5KVRMS l Fast Switching RDS(on) = 12m l Fully Avalanche Rated G l Optimized for SMPS Applications ID = 39A l Lead-Free S Description Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced p

 8.5. Size:169K  international rectifier
 irfiz48g.pdf 

 8.6. Size:106K  international rectifier
 irfiz44n.pdf 

PD - 9.1403A IRFIZ44N HEXFET Power MOSFET Advanced Process Technology D Isolated Package VDSS = 55V High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm RDS(on) = 0.024 Fully Avalanche Rated G ID = 31A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per

 8.7. Size:1392K  international rectifier
 irfiz44g irfiz44gpbf.pdf 

IRFIZ44G, SiHFIZ44G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 60 Available High Voltage Isolation = 2.5 kVRMS (t = 60 s; RDS(on) ( )VGS = 10 V 0.028 f = 60 Hz) RoHS* Qg (Max.) (nC) 95 COMPLIANT Sink to Lead Creepage Distance = 4.8 mm Qgs (nC) 27 175 C Operating Temperature Qgd (nC) 46 Dynamic dV/dt Rating Configurat

 8.8. Size:214K  international rectifier
 auirfiz44n.pdf 

AUTOMOTIVE GRADE PD - 97767 AUIRFIZ44N Features HEXFET Power MOSFET l Advanced Planar Technology l Low On-Resistance V(BR)DSS 55V l Isolated Package l High Voltage Isolation = 2.5KVRMS RDS(on) max. 24m l Sink to Lead Creepage Distantce = 4.8mm l 175 C Operating Temperature ID 31A l Fully Avalanche Rated l Lead-Free, RoHS Compliant l Automotive Qualified* Description S

 8.9. Size:170K  international rectifier
 irfiz44g.pdf 

 8.10. Size:265K  international rectifier
 irfiz44npbf.pdf 

PD - 94836 IRFIZ44NPbF HEXFET Power MOSFET l Advanced Process Technology D l Isolated Package VDSS = 55V l High Voltage Isolation = 2.5KVRMS l Sink to Lead Creepage Dist. = 4.8mm RDS(on) = 0.024 l Fully Avalanche Rated G l Lead-Free ID = 31A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely

 8.11. Size:109K  international rectifier
 irfiz48n.pdf 

PD 9.1407 IRFIZ48N PRELIMINARY HEXFET Power MOSFET Advanced Process Technology D Isolated Package VDSS = 55V High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm RDS(on) = 0.016 Fully Avalanche Rated G ID = 36A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resis

 8.12. Size:270K  international rectifier
 irfiz48npbf.pdf 

PD -94835 IRFIZ48NPbF HEXFET Power MOSFET l Advanced Process Technology D l Isolated Package VDSS = 55V l High Voltage Isolation = 2.5KVRMS l Sink to Lead Creepage Dist. = 4.8mm RDS(on) = 0.016 l Fully Avalanche Rated G l Lead-Free ID = 40A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely l

 8.13. Size:1442K  vishay
 irfiz48g sihfiz48g.pdf 

IRFIZ48G, SiHFIZ48G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 60 High Voltage Isolation = 2.5 kVRMS (t = 60 s; Available RDS(on) ( )VGS = 10 V 0.018 f = 60 Hz) RoHS* Qg (Max.) (nC) 110 COMPLIANT Sink to Lead Creepage Distance = 4.8 mm Qgs (nC) 29 175 C Operating Temperature Qgd (nC) 36 Dynamic dV/dt Rating Configura

 8.14. Size:1390K  vishay
 irfiz44g sihfiz44g.pdf 

IRFIZ44G, SiHFIZ44G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 60 Available High Voltage Isolation = 2.5 kVRMS (t = 60 s; RDS(on) ( )VGS = 10 V 0.028 f = 60 Hz) RoHS* Qg (Max.) (nC) 95 COMPLIANT Sink to Lead Creepage Distance = 4.8 mm Qgs (nC) 27 175 C Operating Temperature Qgd (nC) 46 Dynamic dV/dt Rating Configurat

 8.15. Size:502K  infineon
 irfiz44npbf.pdf 

IRFIZ44NPbF Advanced Process Technology HEXFET Power MOSFET Isolated Package High Voltage Isolation = 2.5KVRMS VDSS 55V Sink to Lead Creepage Dist. = 4.8mm RDS(on) 0.024 Fully Avalanche Rated Lead-Free ID 31A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low

 8.16. Size:500K  infineon
 irfiz48npbf.pdf 

IRFIZ48NPbF Advanced Process Technology HEXFET Power MOSFET Isolated Package High Voltage Isolation = 2.5KVRMS VDSS 55V Sink to Lead Creepage Dist. = 4.8mm RDS(on) 0.016 Fully Avalanche Rated Lead-Free ID 40A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low

 8.17. Size:275K  inchange semiconductor
 irfiz48g.pdf 

iscN-Channel MOSFET Transistor IRFIZ48G FEATURES Low drain-source on-resistance RDS(ON) 18m @V =10V GS Enhancement mode Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETE

 8.18. Size:200K  inchange semiconductor
 irfiz44n.pdf 

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IRFIZ44N FEATURES With TO-220F package Low input capacitance and gate charge Low gate input resistance Reduced switching and conduction losses 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T

 8.19. Size:274K  inchange semiconductor
 irfiz44g.pdf 

iscN-Channel MOSFET Transistor IRFIZ44G FEATURES Low drain-source on-resistance RDS(ON) 28m @V =10V GS Enhancement mode Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETE

 8.20. Size:201K  inchange semiconductor
 irfiz48n.pdf 

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IRFIZ48N FEATURES With TO-220F package Low input capacitance and gate charge Low gate input resistance Reduced switching and conduction losses 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T