All MOSFET. IRFIZ46N Datasheet

 

IRFIZ46N MOSFET. Datasheet pdf. Equivalent

Type Designator: IRFIZ46N

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 40 W

Maximum Drain-Source Voltage |Vds|: 55 V

Maximum Gate-Source Voltage |Vgs|: 10 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 31 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 40.7 nC

Maximum Drain-Source On-State Resistance (Rds): 0.02 Ohm

Package: TO220

IRFIZ46N Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRFIZ46N Datasheet (PDF)

1.1. irfiz46npbf.pdf Size:224K _international_rectifier

IRFIZ46N
IRFIZ46N

PD - 95595 IRFIZ46NPbF HEXFET® Power MOSFET l Advanced Process Technology l Isolated Package D l High Voltage Isolation = 2.5KVRMS … VDSS = 55V l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated l Lead-Free RDS(on) = 0.020Ω G Description ID = 33A Fifth Generation HEXFETs from International Rectifier S utilize advanced processing techniques to achieve the lowest

1.2. irfiz46n.pdf Size:104K _international_rectifier

IRFIZ46N
IRFIZ46N

PD - 9.1306A IRFIZ46N HEXFET Power MOSFET Advanced Process Technology D Isolated Package VDSS = 55V High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated RDS(on) = 0.020? G Description ID = 33A Fifth Generation HEXFETs from International Rectifier S utilize advanced processing techniques to achieve the lowest possible on-resistance per s

 4.1. irfiz44g irfiz44gpbf.pdf Size:1392K _international_rectifier

IRFIZ46N
IRFIZ46N

IRFIZ44G, SiHFIZ44G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Isolated Package VDS (V) 60 Available • High Voltage Isolation = 2.5 kVRMS (t = 60 s; RDS(on) (Ω)VGS = 10 V 0.028 f = 60 Hz) RoHS* Qg (Max.) (nC) 95 COMPLIANT • Sink to Lead Creepage Distance = 4.8 mm Qgs (nC) 27 • 175 °C Operating Temperature Qgd (nC) 46 • Dynamic dV/dt Rating Configurat

4.2. irfiz44npbf.pdf Size:265K _international_rectifier

IRFIZ46N
IRFIZ46N

PD - 94836 IRFIZ44NPbF HEXFET® Power MOSFET l Advanced Process Technology D l Isolated Package VDSS = 55V l High Voltage Isolation = 2.5KVRMS … l Sink to Lead Creepage Dist. = 4.8mm RDS(on) = 0.024Ω l Fully Avalanche Rated G l Lead-Free ID = 31A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely

 4.3. irfiz44n.pdf Size:106K _international_rectifier

IRFIZ46N
IRFIZ46N

PD - 9.1403A IRFIZ44N HEXFET Power MOSFET Advanced Process Technology D Isolated Package VDSS = 55V High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm RDS(on) = 0.024? Fully Avalanche Rated G ID = 31A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silico

4.4. irfiz48v.pdf Size:93K _international_rectifier

IRFIZ46N
IRFIZ46N

PD-94072 IRFIZ48V HEXFET Power MOSFET Advanced Process Technology D Ultra Low On-Resistance VDSS = 60V Isolated Package High Voltage Isolation = 2.5KVRMS RDS(on) = 12m? Fast Switching G Fully Avalanche Rated ID = 39A Optimized for SMPS Applications S Description Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve

 4.5. irfiz44g.pdf Size:170K _international_rectifier

IRFIZ46N
IRFIZ46N

4.6. irfiz48vpbf.pdf Size:214K _international_rectifier

IRFIZ46N
IRFIZ46N

PD-94834 IRFIZ48VPbF l Advanced Process Technology HEXFET® Power MOSFET l Ultra Low On-Resistance D l Isolated Package VDSS = 60V l High Voltage Isolation = 2.5KVRMS ˆ l Fast Switching RDS(on) = 12mΩ l Fully Avalanche Rated G l Optimized for SMPS Applications ID = 39A l Lead-Free S Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced p

4.7. irfiz48npbf.pdf Size:270K _international_rectifier

IRFIZ46N
IRFIZ46N

PD -94835 IRFIZ48NPbF HEXFET® Power MOSFET l Advanced Process Technology D l Isolated Package VDSS = 55V l High Voltage Isolation = 2.5KVRMS … l Sink to Lead Creepage Dist. = 4.8mm RDS(on) = 0.016Ω l Fully Avalanche Rated G l Lead-Free ID = 40A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely l

4.8. irfiz48g irfiz48gpbf.pdf Size:1443K _international_rectifier

IRFIZ46N
IRFIZ46N

IRFIZ48G, SiHFIZ48G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Isolated Package VDS (V) 60 • High Voltage Isolation = 2.5 kVRMS (t = 60 s; Available RDS(on) (Ω)VGS = 10 V 0.018 f = 60 Hz) RoHS* Qg (Max.) (nC) 110 COMPLIANT • Sink to Lead Creepage Distance = 4.8 mm Qgs (nC) 29 • 175 °C Operating Temperature Qgd (nC) 36 • Dynamic dV/dt Rating Configura

4.9. irfiz48g.pdf Size:169K _international_rectifier

IRFIZ46N
IRFIZ46N

4.10. irfiz48n.pdf Size:109K _international_rectifier

IRFIZ46N
IRFIZ46N

PD 9.1407 IRFIZ48N PRELIMINARY HEXFET Power MOSFET Advanced Process Technology D Isolated Package VDSS = 55V High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm RDS(on) = 0.016? Fully Avalanche Rated G ID = 36A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance

4.11. irfiz44g sihfiz44g.pdf Size:1390K _vishay

IRFIZ46N
IRFIZ46N

IRFIZ44G, SiHFIZ44G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 60 Available High Voltage Isolation = 2.5 kVRMS (t = 60 s; RDS(on) (?)VGS = 10 V 0.028 f = 60 Hz) RoHS* Qg (Max.) (nC) 95 COMPLIANT Sink to Lead Creepage Distance = 4.8 mm Qgs (nC) 27 175 C Operating Temperature Qgd (nC) 46 Dynamic dV/dt Rating Configuration Single L

4.12. irfiz48g sihfiz48g.pdf Size:1442K _vishay

IRFIZ46N
IRFIZ46N

IRFIZ48G, SiHFIZ48G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 60 High Voltage Isolation = 2.5 kVRMS (t = 60 s; Available RDS(on) (?)VGS = 10 V 0.018 f = 60 Hz) RoHS* Qg (Max.) (nC) 110 COMPLIANT Sink to Lead Creepage Distance = 4.8 mm Qgs (nC) 29 175 C Operating Temperature Qgd (nC) 36 Dynamic dV/dt Rating Configuration Single

Datasheet: IRFIZ24A , IRFIZ24E , IRFIZ24N , IRFIZ34A , IRFIZ34E , IRFIZ34N , IRFIZ44A , IRFIZ44N , IRFP450 , IRFIZ48N , IRFL014 , IRFL024N , IRFL1006 , IRFL110 , IRFL210 , IRFL214 , IRFL4105 .

 

 
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