IRLZ44NSPBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: IRLZ44NSPBF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Máxima disipación de potencia (Pd): 110 W
   Voltaje máximo drenador - fuente |Vds|: 55 V
   Voltaje máximo fuente - puerta |Vgs|: 16 V
   Corriente continua de drenaje |Id|: 47 A
   Temperatura máxima de unión (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   Tensión umbral entre puerta y fuente |Vgs(th)|: 2 V
   Tiempo de subida (tr): 84 nS
   Conductancia de drenaje-sustrato (Cd): 400 pF
   Resistencia entre drenaje y fuente RDS(on): 0.022 Ohm
   Paquete / Cubierta: TO263

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IRLZ44NSPBF Datasheet (PDF)

..1. Size:340K international rectifier
irlz44nlpbf irlz44nspbf.pdf

IRLZ44NS/LPbFl Logic-Level Gate Drive l Advanced Process TechnologyDl Surface Mount (IRLZ44NS) DSS l Low-profile through-hole (IRLZ44NL)l 175C Operating Temperature DS(on) l Fast SwitchingGl Fully Avalanche Rated D l Lead-FreeSDescription

6.1. Size:178K international rectifier
irlz44ns irlz44nl.pdf

PD - 91347DIRLZ44NS/LHEXFET Power MOSFET Logic-Level Gate Drive Advanced Process TechnologyDVDSS = 55V Surface Mount (IRLZ44NS) Low-profile through-hole (IRLZ44NL) 175C Operating TemperatureRDS(on) = 0.022 Fast SwitchingG Fully Avalanche RatedID = 47ADescriptionSFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques

6.2. Size:340K infineon
irlz44ns irlz44nl.pdf

7.1. Size:102K international rectifier
irlz44n.pdf

PD - 9.1346BIRLZ44NHEXFET Power MOSFET Logic-Level Gate DriveD Advanced Process TechnologyVDSS = 55V Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 0.022 Fast SwitchingG Fully Avalanche RatedID = 47ASDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieve thelowest possible on-resistan

7.2. Size:223K international rectifier
irlz44npbf.pdf

PD - 94831IRLZ44NPbFHEXFET Power MOSFETl Logic-Level Gate DriveDl Advanced Process TechnologyVDSS = 55Vl Dynamic dv/dt Ratingl 175C Operating TemperatureRDS(on) = 0.022l Fast SwitchingGl Fully Avalanche Ratedl Lead-FreeID = 47ASDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieve thelowest

7.3. Size:223K infineon
irlz44npbf.pdf

7.4. Size:245K inchange semiconductor
irlz44n.pdf

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRLZ44N IIRLZ44NFEATURESStatic drain-source on-resistance:RDS(on) 22mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM R

Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

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