IRLZ44NSPBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRLZ44NSPBF
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pd): 110 W
Tensión drenaje-fuente (Vds): 55 V
Tensión compuerta-fuente (Vgs): 16 V
Corriente continua de drenaje (Id): 47 A
Temperatura operativa máxima (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral compuerta-fuente Vgs(th): 2 V
Tiempo de elevación (tr): 84 nS
Conductancia de drenaje-sustrato (Cd): 400 pF
Resistencia drenaje-fuente RDS(on): 0.022 Ohm
Empaquetado / Estuche: TO263
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IRLZ44NSPBF Datasheet (PDF)
1.1. irlz44nlpbf irlz44nspbf.pdf 
Size:340K _upd
IRLZ44NS/LPbF l Logic-Level Gate Drive ® l Advanced Process Technology D l Surface Mount (IRLZ44NS) DSS l Low-profile through-hole (IRLZ44NL) l 175°C Operating Temperature DS(on) Ω l Fast Switching G l Fully Avalanche Rated D l Lead-Free S Description
2.1. irlz44ns.pdf Size:178K _international_rectifier
PD - 91347D IRLZ44NS/L HEXFET Power MOSFET Logic-Level Gate Drive Advanced Process Technology D VDSS = 55V Surface Mount (IRLZ44NS) Low-profile through-hole (IRLZ44NL) 175C Operating Temperature RDS(on) = 0.022? Fast Switching G Fully Avalanche Rated ID = 47A Description S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to ach
3.1. irlz44npbf.pdf Size:223K _upd
PD - 94831 IRLZ44NPbF HEXFET® Power MOSFET l Logic-Level Gate Drive D l Advanced Process Technology VDSS = 55V l Dynamic dv/dt Rating l 175°C Operating Temperature RDS(on) = 0.022Ω l Fast Switching G l Fully Avalanche Rated l Lead-Free ID = 47A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest
3.2. irlz44n.pdf Size:102K _international_rectifier
PD - 9.1346B IRLZ44N HEXFET Power MOSFET Logic-Level Gate Drive D Advanced Process Technology VDSS = 55V Dynamic dv/dt Rating 175C Operating Temperature RDS(on) = 0.022? Fast Switching G Fully Avalanche Rated ID = 47A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per
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