IRLZ44NSPBF Todos los transistores

 

IRLZ44NSPBF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IRLZ44NSPBF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 110 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 55 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 16 V
   |Id|ⓘ - Corriente continua de drenaje: 47 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 84 nS
   Cossⓘ - Capacitancia de salida: 400 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.022 Ohm
   Paquete / Cubierta: TO263
 

 Búsqueda de reemplazo de IRLZ44NSPBF MOSFET

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Principales características: IRLZ44NSPBF

 ..1. Size:340K  international rectifier
 irlz44nlpbf irlz44nspbf.pdf pdf_icon

IRLZ44NSPBF

IRLZ44NS/LPbF l Logic-Level Gate Drive l Advanced Process Technology D l Surface Mount (IRLZ44NS) DSS l Low-profile through-hole (IRLZ44NL) l 175 C Operating Temperature DS(on) l Fast Switching G l Fully Avalanche Rated D l Lead-Free S Description

 6.1. Size:340K  international rectifier
 irlz44ns irlz44nl.pdf pdf_icon

IRLZ44NSPBF

IRLZ44NS/LPbF l Logic-Level Gate Drive l Advanced Process Technology D l Surface Mount (IRLZ44NS) DSS l Low-profile through-hole (IRLZ44NL) l 175 C Operating Temperature DS(on) l Fast Switching G l Fully Avalanche Rated D l Lead-Free S Description

 7.1. Size:102K  international rectifier
 irlz44n.pdf pdf_icon

IRLZ44NSPBF

PD - 9.1346B IRLZ44N HEXFET Power MOSFET Logic-Level Gate Drive D Advanced Process Technology VDSS = 55V Dynamic dv/dt Rating 175 C Operating Temperature RDS(on) = 0.022 Fast Switching G Fully Avalanche Rated ID = 47A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistan

 7.2. Size:223K  international rectifier
 irlz44npbf.pdf pdf_icon

IRLZ44NSPBF

PD - 94831 IRLZ44NPbF HEXFET Power MOSFET l Logic-Level Gate Drive D l Advanced Process Technology VDSS = 55V l Dynamic dv/dt Rating l 175 C Operating Temperature RDS(on) = 0.022 l Fast Switching G l Fully Avalanche Rated l Lead-Free ID = 47A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest

MOSTRAR MÁS

Otros transistores... IRLZ44PBF , IRLZ44S , IRLZ44SPBF , IRLZ44ZLPBF , IRLZ44ZPBF , IRLZ44ZSPBF , IRLZ44NLPBF , IRLZ44NPBF , IRLZ44N , IRLZ34L , IRLZ34NLPBF , IRLZ34NPBF , IRLZ34NSPBF , IRLZ34PBF , IRLZ34S , IRLZ34SPBF , IRLZ24L .

 

 
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