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IRLZ44NSPBF MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: IRLZ44NSPBF

Тип транзистора: MOSFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 110 W

Предельно допустимое напряжение сток-исток (Uds): 55 V

Предельно допустимое напряжение затвор-исток (Ugs): 16 V

Пороговое напряжение включения Ugs(th): 2 V

Максимально допустимый постоянный ток стока (Id): 47 A

Максимальная температура канала (Tj): 175 °C

Время нарастания (tr): 84 ns

Выходная емкость (Cd): 400 pf

Сопротивление сток-исток открытого транзистора (Rds): 0.022 Ohm

Тип корпуса: TO263

Аналог (замена) для IRLZ44NSPBF

 

 

IRLZ44NSPBF Datasheet (PDF)

1.1. irlz44nlpbf irlz44nspbf.pdf Size:340K _upd

IRLZ44NSPBF IRLZ44NSPBF

 IRLZ44NS/LPbF l Logic-Level Gate Drive ® l Advanced Process Technology D l Surface Mount (IRLZ44NS) DSS l Low-profile through-hole (IRLZ44NL) l 175°C Operating Temperature DS(on) Ω l Fast Switching G l Fully Avalanche Rated D l Lead-Free S Description

2.1. irlz44ns.pdf Size:178K _international_rectifier

IRLZ44NSPBF IRLZ44NSPBF

PD - 91347D IRLZ44NS/L HEXFET Power MOSFET Logic-Level Gate Drive Advanced Process Technology D VDSS = 55V Surface Mount (IRLZ44NS) Low-profile through-hole (IRLZ44NL) 175C Operating Temperature RDS(on) = 0.022? Fast Switching G Fully Avalanche Rated ID = 47A Description S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to ach

 3.1. irlz44npbf.pdf Size:223K _upd

IRLZ44NSPBF IRLZ44NSPBF

PD - 94831 IRLZ44NPbF HEXFET® Power MOSFET l Logic-Level Gate Drive D l Advanced Process Technology VDSS = 55V l Dynamic dv/dt Rating l 175°C Operating Temperature RDS(on) = 0.022Ω l Fast Switching G l Fully Avalanche Rated l Lead-Free ID = 47A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest

3.2. irlz44n.pdf Size:102K _international_rectifier

IRLZ44NSPBF IRLZ44NSPBF

PD - 9.1346B IRLZ44N HEXFET Power MOSFET Logic-Level Gate Drive D Advanced Process Technology VDSS = 55V Dynamic dv/dt Rating 175C Operating Temperature RDS(on) = 0.022? Fast Switching G Fully Avalanche Rated ID = 47A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per

 3.3. irlz44n.pdf Size:245K _inchange_semiconductor

IRLZ44NSPBF IRLZ44NSPBF

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRLZ44N， IIRLZ44N ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤22mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·reliable device for use in a wide variety of applications ·ABSOLUTE MAXIMUM R

Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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