IRLZ44NSPBF MOSFET. Datasheet pdf. Equivalent
Type Designator: IRLZ44NSPBF
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 110 W
Maximum Drain-Source Voltage |Vds|: 55 V
Maximum Gate-Source Voltage |Vgs|: 16 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 2 V
Maximum Drain Current |Id|: 47 A
Maximum Junction Temperature (Tj): 175 °C
Rise Time (tr): 84 nS
Drain-Source Capacitance (Cd): 400 pF
Maximum Drain-Source On-State Resistance (Rds): 0.022 Ohm
Package: TO263
IRLZ44NSPBF Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRLZ44NSPBF Datasheet (PDF)
1.1. irlz44nlpbf irlz44nspbf.pdf 
Size:340K _upd
 IRLZ44NS/LPbF l Logic-Level Gate Drive ® l Advanced Process Technology D l Surface Mount (IRLZ44NS) DSS l Low-profile through-hole (IRLZ44NL) l 175°C Operating Temperature DS(on) Ω l Fast Switching G l Fully Avalanche Rated D l Lead-Free S Description
2.1. irlz44ns.pdf Size:178K _international_rectifier
PD - 91347D IRLZ44NS/L HEXFET® Power MOSFET Logic-Level Gate Drive Advanced Process Technology D VDSS = 55V Surface Mount (IRLZ44NS) Low-profile through-hole (IRLZ44NL) 175°C Operating Temperature RDS(on) = 0.022? Fast Switching G Fully Avalanche Rated ID = 47A Description S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to ach
3.1. irlz44npbf.pdf Size:223K _upd
PD - 94831 IRLZ44NPbF HEXFET® Power MOSFET l Logic-Level Gate Drive D l Advanced Process Technology VDSS = 55V l Dynamic dv/dt Rating l 175°C Operating Temperature RDS(on) = 0.022Ω l Fast Switching G l Fully Avalanche Rated l Lead-Free ID = 47A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest
3.2. irlz44n.pdf Size:102K _international_rectifier
PD - 9.1346B IRLZ44N HEXFET® Power MOSFET Logic-Level Gate Drive D Advanced Process Technology VDSS = 55V Dynamic dv/dt Rating 175°C Operating Temperature RDS(on) = 0.022? Fast Switching G Fully Avalanche Rated ID = 47A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per
Datasheet: IRLZ44PBF , IRLZ44S , IRLZ44SPBF , IRLZ44ZLPBF , IRLZ44ZPBF , IRLZ44ZSPBF , IRLZ44NLPBF , IRLZ44NPBF , IRFZ46N , IRLZ34L , IRLZ34NLPBF , IRLZ34NPBF , IRLZ34NSPBF , IRLZ34PBF , IRLZ34S , IRLZ34SPBF , IRLZ24L .
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