IRLI520G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: IRLI520G
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 37 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 10 V
   |Id|ⓘ - Corriente continua de drenaje: 7.2 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2 V
   Qgⓘ - Carga de la puerta: 12 nC
   trⓘ - Tiempo de subida: 64 nS
   Cossⓘ - Capacitancia de salida: 150 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.27 Ohm
   Paquete / Cubierta: TO220F

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IRLI520G Datasheet (PDF)

..1. Size:158K international rectifier
irli520g.pdf

Document Number: 90397 www.vishay.com1379Document Number: 90397 www.vishay.com1380Document Number: 90397 www.vishay.com1381Document Number: 90397 www.vishay.com1382Document Number: 90397 www.vishay.com1383Document Number: 90397 www.vishay.com1384Legal Disclaimer NoticeVishayNoticeThe products described herein were acquired by Vishay Intertechnology, Inc., as

..2. Size:968K vishay
irli520g irli520gpbf sihli520g.pdf

IRLI520G, SiHLI520GVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 100 High Voltage Isolation = 2.5 kVRMS (t = 60 s;Availablef = 60 Hz)RDS(on) ()VGS = 5 V 0.27RoHS* Sink to Lead Creepage Distance = 4.8 mmCOMPLIANTQg (Max.) (nC) 12 Logic-Level Gate DriveQgs (nC) 3.0 RDS (on) Specified at VGS = 4 V and 5 VQgd (nC) 7.

..3. Size:967K vishay
irli520g sihli520g.pdf

7.1. Size:165K 1
irli520a irlw520a.pdf

7.2. Size:1059K international rectifier
irli520npbf.pdf

PD - 95049IRLI520NPbF Lead-Freewww.irf.com 12/25/04IRLI520NPbF2 www.irf.comIRLI520NPbFwww.irf.com 3IRLI520NPbF4 www.irf.comIRLI520NPbFwww.irf.com 5IRLI520NPbF6 www.irf.comIRLI520NPbFwww.irf.com 7IRLI520NPbF8 www.irf.comIRLI520NPbFTO-220 Full-Pak Package OutlineDimensions are shown in millimeters (inches)TO-220 Full-Pak Part Marking Informat

7.3. Size:146K international rectifier
irli520n.pdf

PD - 9.1496AIRLI520NPRELIMINARYHEXFET Power MOSFET Logic-Level Gate DriveD Advanced Process Technology VDSS = 100V Isolated Package High Voltage Isolation = 2.5KVRMS RDS(on) = 0.18 Sink to Lead Creepage Dist. = 4.8mmG Fully Avalanche RatedID =8.1ADescriptionSFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achi

7.4. Size:611K infineon
irli520npbf.pdf

IRLI520NPbF Logic Level Gate Drive HEXFET Power MOSFET Advanced Process Technology Isolated Package VDSS 100V High Voltage Isolation = 2.5KVRMS RDS(on) 0.18 Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated ID 8.1A Lead-Free Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing te

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