IRLI520G
MOSFET. Datasheet pdf. Equivalent
Type Designator: IRLI520G
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 37
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2
V
|Id|ⓘ - Maximum Drain Current: 7.2
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 12
nC
trⓘ - Rise Time: 64
nS
Cossⓘ -
Output Capacitance: 150
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.27
Ohm
Package:
TO220F
IRLI520G
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRLI520G
Datasheet (PDF)
..1. Size:158K international rectifier
irli520g.pdf
Document Number: 90397 www.vishay.com1379Document Number: 90397 www.vishay.com1380Document Number: 90397 www.vishay.com1381Document Number: 90397 www.vishay.com1382Document Number: 90397 www.vishay.com1383Document Number: 90397 www.vishay.com1384Legal Disclaimer NoticeVishayNoticeThe products described herein were acquired by Vishay Intertechnology, Inc., as
..2. Size:968K vishay
irli520g irli520gpbf sihli520g.pdf
IRLI520G, SiHLI520GVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 100 High Voltage Isolation = 2.5 kVRMS (t = 60 s;Availablef = 60 Hz)RDS(on) ()VGS = 5 V 0.27RoHS* Sink to Lead Creepage Distance = 4.8 mmCOMPLIANTQg (Max.) (nC) 12 Logic-Level Gate DriveQgs (nC) 3.0 RDS (on) Specified at VGS = 4 V and 5 VQgd (nC) 7.
..3. Size:967K vishay
irli520g sihli520g.pdf
IRLI520G, SiHLI520GVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 100 High Voltage Isolation = 2.5 kVRMS (t = 60 s;Availablef = 60 Hz)RDS(on) ()VGS = 5 V 0.27RoHS* Sink to Lead Creepage Distance = 4.8 mmCOMPLIANTQg (Max.) (nC) 12 Logic-Level Gate DriveQgs (nC) 3.0 RDS (on) Specified at VGS = 4 V and 5 VQgd (nC) 7.
7.2. Size:1059K international rectifier
irli520npbf.pdf
PD - 95049IRLI520NPbF Lead-Freewww.irf.com 12/25/04IRLI520NPbF2 www.irf.comIRLI520NPbFwww.irf.com 3IRLI520NPbF4 www.irf.comIRLI520NPbFwww.irf.com 5IRLI520NPbF6 www.irf.comIRLI520NPbFwww.irf.com 7IRLI520NPbF8 www.irf.comIRLI520NPbFTO-220 Full-Pak Package OutlineDimensions are shown in millimeters (inches)TO-220 Full-Pak Part Marking Informat
7.3. Size:146K international rectifier
irli520n.pdf
PD - 9.1496AIRLI520NPRELIMINARYHEXFET Power MOSFET Logic-Level Gate DriveD Advanced Process Technology VDSS = 100V Isolated Package High Voltage Isolation = 2.5KVRMS RDS(on) = 0.18 Sink to Lead Creepage Dist. = 4.8mmG Fully Avalanche RatedID =8.1ADescriptionSFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achi
7.4. Size:611K infineon
irli520npbf.pdf
IRLI520NPbF Logic Level Gate Drive HEXFET Power MOSFET Advanced Process Technology Isolated Package VDSS 100V High Voltage Isolation = 2.5KVRMS RDS(on) 0.18 Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated ID 8.1A Lead-Free Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing te
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