IRFL024N MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRFL024N

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2.1 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 55 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 4 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 13.4 nS

Cossⓘ - Capacitancia de salida: 145 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.075 Ohm

Encapsulados: SOT223

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IRFL024N datasheet

 ..1. Size:110K  international rectifier
 irfl024n.pdf pdf_icon

IRFL024N

PD - 91861A IRFL024N HEXFET Power MOSFET Surface Mount D Advanced Process Technology VDSS = 55V Ultra Low On-Resistance Dynamic dv/dt Rating RDS(on) = 0.075 Fast Switching G Fully Avalanche Rated ID = 2.8A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area

 ..2. Size:140K  international rectifier
 irfl024npbf.pdf pdf_icon

IRFL024N

PD - 95339 IRFL024NPbF HEXFET Power MOSFET l Surface Mount l Advanced Process Technology D l Ultra Low On-Resistance VDSS = 55V l Dynamic dv/dt Rating l Fast Switching RDS(on) = 0.075 l Fully Avalanche Rated G l Lead-Free ID = 2.8A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resist

 0.1. Size:208K  international rectifier
 auirfl024n.pdf pdf_icon

IRFL024N

AUTOMOTIVE GRADE AUIRFL024N HEXFET Power MOSFET Features D V(BR)DSS 55V Advanced Planar Technology Low On-Resistance RDS(on) max. 75m Dynamic dV/dT Rating G 150 C Operating Temperature ID S 2.8A Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax D Lead-Free, RoHS Compliant Automotive Qualified* S D Descri

 7.1. Size:264K  international rectifier
 irfl024zpbf.pdf pdf_icon

IRFL024N

PD - 95312A IRFL024ZPbF HEXFET Power MOSFET Features D l Advanced Process Technology VDSS = 55V l Ultra Low On-Resistance l 150 C Operating Temperature RDS(on) = 57.5m l Fast Switching G l Repetitive Avalanche Allowed up to Tjmax l Lead-Free ID = 5.1A S Description This HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on- resistan

MOSTRAR MÁS

Otros transistores... IRFIZ34A, IRFIZ34E, IRFIZ34N, IRFIZ44A, IRFIZ44N, IRFIZ46N, IRFIZ48N, IRFL014, 8205A, IRFL1006, IRFL110, IRFL210, IRFL214, IRFL4105, IRFL4310, IRFL9014, IRFL9110