IRFL024N MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: IRFL024N
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 2.1 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 55 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 4 A
Tjⓘ - Максимальная температура канала: 150 °C
Qgⓘ - Общий заряд затвора: 18.3(max) nC
trⓘ - Время нарастания: 13.4 ns
Cossⓘ - Выходная емкость: 145 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.075 Ohm
Тип корпуса: SOT223
IRFL024N Datasheet (PDF)
irfl024n.pdf
PD - 91861AIRFL024NHEXFET Power MOSFET Surface MountD Advanced Process TechnologyVDSS = 55V Ultra Low On-Resistance Dynamic dv/dt RatingRDS(on) = 0.075 Fast SwitchingG Fully Avalanche RatedID = 2.8ASDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per silicon area
irfl024npbf.pdf
PD - 95339IRFL024NPbFHEXFET Power MOSFETl Surface Mountl Advanced Process TechnologyDl Ultra Low On-ResistanceVDSS = 55Vl Dynamic dv/dt Ratingl Fast SwitchingRDS(on) = 0.075l Fully Avalanche RatedGl Lead-FreeID = 2.8ASDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resist
irfl024npbf.pdf
PD - 95339IRFL024NPbFHEXFET Power MOSFETl Surface Mountl Advanced Process TechnologyDl Ultra Low On-ResistanceVDSS = 55Vl Dynamic dv/dt Ratingl Fast SwitchingRDS(on) = 0.075l Fully Avalanche RatedGl Lead-FreeID = 2.8ASDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resist
auirfl024n.pdf
AUTOMOTIVE GRADEAUIRFL024NHEXFET Power MOSFETFeaturesDV(BR)DSS55V Advanced Planar Technology Low On-ResistanceRDS(on) max.75m Dynamic dV/dT Rating G 150C Operating TemperatureIDS 2.8A Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to TjmaxD Lead-Free, RoHS Compliant Automotive Qualified*SDDescri
irfl024zpbf.pdf
PD - 95312AIRFL024ZPbFHEXFET Power MOSFETFeaturesDl Advanced Process TechnologyVDSS = 55Vl Ultra Low On-Resistancel 150C Operating TemperatureRDS(on) = 57.5ml Fast SwitchingGl Repetitive Avalanche Allowed up to Tjmaxl Lead-FreeID = 5.1ASDescriptionThis HEXFET Power MOSFET utilizes the latestprocessing techniques to achieve extremely low on-resistan
irfl024z.pdf
PD - 95817IRFL024ZAUTOMOTIVE MOSFETHEXFET Power MOSFETFeaturesDl Advanced Process TechnologyVDSS = 55Vl Ultra Low On-Resistancel 150C Operating TemperatureRDS(on) = 57.5ml Fast SwitchingGl Repetitive Avalanche Allowed up to TjmaxID = 5.1ASDescriptionSpecifically designed for Automotive applications, thisHEXFET Power MOSFET utilizes the latest process
irfl024zpbf.pdf
PD - 95312AIRFL024ZPbFHEXFET Power MOSFETFeaturesDl Advanced Process TechnologyVDSS = 55Vl Ultra Low On-Resistancel 150C Operating TemperatureRDS(on) = 57.5ml Fast SwitchingGl Repetitive Avalanche Allowed up to Tjmaxl Lead-FreeID = 5.1ASDescriptionThis HEXFET Power MOSFET utilizes the latestprocessing techniques to achieve extremely low on-resistan
Другие MOSFET... IRFIZ34A , IRFIZ34E , IRFIZ34N , IRFIZ44A , IRFIZ44N , IRFIZ46N , IRFIZ48N , IRFL014 , STP75NF75 , IRFL1006 , IRFL110 , IRFL210 , IRFL214 , IRFL4105 , IRFL4310 , IRFL9014 , IRFL9110 .
Список транзисторов
Обновления
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