All MOSFET. IRFL024N Datasheet

 

IRFL024N Datasheet and Replacement


   Type Designator: IRFL024N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 18.3(max) nC
   tr ⓘ - Rise Time: 13.4 nS
   Cossⓘ - Output Capacitance: 145 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.075 Ohm
   Package: SOT223
 

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IRFL024N Datasheet (PDF)

 ..1. Size:110K  international rectifier
 irfl024n.pdf pdf_icon

IRFL024N

PD - 91861AIRFL024NHEXFET Power MOSFET Surface MountD Advanced Process TechnologyVDSS = 55V Ultra Low On-Resistance Dynamic dv/dt RatingRDS(on) = 0.075 Fast SwitchingG Fully Avalanche RatedID = 2.8ASDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per silicon area

 ..2. Size:140K  international rectifier
 irfl024npbf.pdf pdf_icon

IRFL024N

PD - 95339IRFL024NPbFHEXFET Power MOSFETl Surface Mountl Advanced Process TechnologyDl Ultra Low On-ResistanceVDSS = 55Vl Dynamic dv/dt Ratingl Fast SwitchingRDS(on) = 0.075l Fully Avalanche RatedGl Lead-FreeID = 2.8ASDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resist

 0.1. Size:208K  international rectifier
 auirfl024n.pdf pdf_icon

IRFL024N

AUTOMOTIVE GRADEAUIRFL024NHEXFET Power MOSFETFeaturesDV(BR)DSS55V Advanced Planar Technology Low On-ResistanceRDS(on) max.75m Dynamic dV/dT Rating G 150C Operating TemperatureIDS 2.8A Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to TjmaxD Lead-Free, RoHS Compliant Automotive Qualified*SDDescri

 7.1. Size:264K  international rectifier
 irfl024zpbf.pdf pdf_icon

IRFL024N

PD - 95312AIRFL024ZPbFHEXFET Power MOSFETFeaturesDl Advanced Process TechnologyVDSS = 55Vl Ultra Low On-Resistancel 150C Operating TemperatureRDS(on) = 57.5ml Fast SwitchingGl Repetitive Avalanche Allowed up to Tjmaxl Lead-FreeID = 5.1ASDescriptionThis HEXFET Power MOSFET utilizes the latestprocessing techniques to achieve extremely low on-resistan

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History: 40604 | STK17N10

Keywords - IRFL024N MOSFET datasheet

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