IRLI640GPBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRLI640GPBF
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pd): 40 W
Tensión drenaje-fuente (Vds): 200 V
Tensión compuerta-fuente (Vgs): 10 V
Corriente continua de drenaje (Id): 9.9 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral compuerta-fuente Vgs(th): 2 V
Tiempo de elevación (tr): 83 nS
Conductancia de drenaje-sustrato (Cd): 400 pF
Resistencia drenaje-fuente RDS(on): 0.18 Ohm
Empaquetado / Estuche: TO220F
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IRLI640GPBF Datasheet (PDF)
1.1. irli640gpbf.pdf 
Size:1708K _upd
IRLI640G, SiHLI640G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Isolated Package VDS (V) 200 Available • High Voltage Isolation = 2.5 kVRMS (t = 60 s; RDS(on) (Ω)VGS = 5.0 V 0.18 f = 60 Hz) RoHS* COMPLIANT • Sink to Lead Creepage Dist. 4.8 mm Qg (Max.) (nC) 66 • Logic-Level Gate Drive Qgs (nC) 9.0 • RDS(on) Specified at VGS = 4V and 5 V Qgd (nC) 38
1.2. irli640gpbf.pdf Size:1231K _international_rectifier
PD- 95654 IRLI640GPbF Lead-Free 7/26/04 Document Number: 91314 www.vishay.com 1 IRLI640GPbF Document Number: 91314 www.vishay.com 2 IRLI640GPbF Document Number: 91314 www.vishay.com 3 IRLI640GPbF Document Number: 91314 www.vishay.com 4 IRLI640GPbF Document Number: 91314 www.vishay.com 5 IRLI640GPbF Document Number: 91314 www.vishay.com 6 IRLI640GPbF Peak Diode Recover
2.1. irli640g.pdf Size:153K _international_rectifier
PD - 9.1237 IRLI640G HEXFET Power MOSFET Isolated Package High Voltage Isolation = 2.5KVRMS VDSS = 200V Sink to Lead Creepage Dist. 4.8mm Logic-Level Gate Drive RDS(on) = 0.18? RDS(ON) Specified at VGS = 4V & 5V Fast Switching Ease of paralleling ID = 9.9A Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switc
2.2. irli640g sihli640g.pdf Size:1706K _vishay
IRLI640G, SiHLI640G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 200 Available High Voltage Isolation = 2.5 kVRMS (t = 60 s; RDS(on) (?)VGS = 5.0 V 0.18 f = 60 Hz) RoHS* COMPLIANT Sink to Lead Creepage Dist. 4.8 mm Qg (Max.) (nC) 66 Logic-Level Gate Drive Qgs (nC) 9.0 RDS(on) Specified at VGS = 4V and 5 V Qgd (nC) 38 Fast Switching
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