IRLI640GPBF Todos los transistores

 

IRLI640GPBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IRLI640GPBF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 40 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 200 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 10 V
   |Id|ⓘ - Corriente continua de drenaje: 9.9 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 83 nS
   Cossⓘ - Capacitancia de salida: 400 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.18 Ohm
   Paquete / Cubierta: TO220F
 

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IRLI640GPBF Datasheet (PDF)

 ..1. Size:1231K  international rectifier
 irli640gpbf.pdf pdf_icon

IRLI640GPBF

PD- 95654IRLI640GPbF Lead-Free7/26/04Document Number: 91314 www.vishay.com1IRLI640GPbFDocument Number: 91314 www.vishay.com2IRLI640GPbFDocument Number: 91314 www.vishay.com3IRLI640GPbFDocument Number: 91314 www.vishay.com4IRLI640GPbFDocument Number: 91314 www.vishay.com5IRLI640GPbFDocument Number: 91314 www.vishay.com6IRLI640GPbFPeak Diode Re

 ..2. Size:1708K  vishay
 irli640gpbf sihli640g.pdf pdf_icon

IRLI640GPBF

IRLI640G, SiHLI640GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 200Available High Voltage Isolation = 2.5 kVRMS (t = 60 s;RDS(on) ()VGS = 5.0 V 0.18f = 60 Hz)RoHS*COMPLIANT Sink to Lead Creepage Dist. 4.8 mmQg (Max.) (nC) 66 Logic-Level Gate DriveQgs (nC) 9.0 RDS(on) Specified at VGS = 4V and 5 VQgd (nC) 38

 6.1. Size:153K  international rectifier
 irli640g.pdf pdf_icon

IRLI640GPBF

PD - 9.1237IRLI640GHEXFET Power MOSFETIsolated PackageHigh Voltage Isolation = 2.5KVRMS VDSS = 200VSink to Lead Creepage Dist. 4.8mmLogic-Level Gate DriveRDS(on) = 0.18RDS(ON) Specified at VGS = 4V & 5VFast SwitchingEase of parallelingID = 9.9ADescriptionThird Generation HEXFETs from International Rectifier provide the designerwith the best combination of fast

 6.2. Size:1706K  vishay
 irli640g sihli640g.pdf pdf_icon

IRLI640GPBF

IRLI640G, SiHLI640GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 200Available High Voltage Isolation = 2.5 kVRMS (t = 60 s;RDS(on) ()VGS = 5.0 V 0.18f = 60 Hz)RoHS*COMPLIANT Sink to Lead Creepage Dist. 4.8 mmQg (Max.) (nC) 66 Logic-Level Gate DriveQgs (nC) 9.0 RDS(on) Specified at VGS = 4V and 5 VQgd (nC) 38

MOSTRAR MÁS

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History: 2N6760JTX | 2N6764JANTX

 

 
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