All MOSFET. IRLI640GPBF Datasheet

 

IRLI640GPBF Datasheet and Replacement


   Type Designator: IRLI640GPBF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 40 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Id| ⓘ - Maximum Drain Current: 9.9 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 83 nS
   Cossⓘ - Output Capacitance: 400 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm
   Package: TO220F
 

 IRLI640GPBF substitution

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IRLI640GPBF Datasheet (PDF)

 ..1. Size:1231K  international rectifier
 irli640gpbf.pdf pdf_icon

IRLI640GPBF

PD- 95654IRLI640GPbF Lead-Free7/26/04Document Number: 91314 www.vishay.com1IRLI640GPbFDocument Number: 91314 www.vishay.com2IRLI640GPbFDocument Number: 91314 www.vishay.com3IRLI640GPbFDocument Number: 91314 www.vishay.com4IRLI640GPbFDocument Number: 91314 www.vishay.com5IRLI640GPbFDocument Number: 91314 www.vishay.com6IRLI640GPbFPeak Diode Re

 ..2. Size:1708K  vishay
 irli640gpbf sihli640g.pdf pdf_icon

IRLI640GPBF

IRLI640G, SiHLI640GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 200Available High Voltage Isolation = 2.5 kVRMS (t = 60 s;RDS(on) ()VGS = 5.0 V 0.18f = 60 Hz)RoHS*COMPLIANT Sink to Lead Creepage Dist. 4.8 mmQg (Max.) (nC) 66 Logic-Level Gate DriveQgs (nC) 9.0 RDS(on) Specified at VGS = 4V and 5 VQgd (nC) 38

 6.1. Size:153K  international rectifier
 irli640g.pdf pdf_icon

IRLI640GPBF

PD - 9.1237IRLI640GHEXFET Power MOSFETIsolated PackageHigh Voltage Isolation = 2.5KVRMS VDSS = 200VSink to Lead Creepage Dist. 4.8mmLogic-Level Gate DriveRDS(on) = 0.18RDS(ON) Specified at VGS = 4V & 5VFast SwitchingEase of parallelingID = 9.9ADescriptionThird Generation HEXFETs from International Rectifier provide the designerwith the best combination of fast

 6.2. Size:1706K  vishay
 irli640g sihli640g.pdf pdf_icon

IRLI640GPBF

IRLI640G, SiHLI640GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 200Available High Voltage Isolation = 2.5 kVRMS (t = 60 s;RDS(on) ()VGS = 5.0 V 0.18f = 60 Hz)RoHS*COMPLIANT Sink to Lead Creepage Dist. 4.8 mmQg (Max.) (nC) 66 Logic-Level Gate DriveQgs (nC) 9.0 RDS(on) Specified at VGS = 4V and 5 VQgd (nC) 38

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Datasheet: IRLI520NPBF , IRLI530G , IRLI530GPBF , IRLI540G , IRLI540GPBF , IRLI540NPBF , IRLI620GPBF , IRLI630GPBF , 4435 , IRLIB4343 , IRLIB9343PBF , IRLIZ14GPBF , IRLIZ24NPBF , IRLIZ34GPBF , IRLIZ34NPBF , IRLIZ44GPBF , IRLIZ44NPBF .

History: SP8M3-TB | SSG4463P

Keywords - IRLI640GPBF MOSFET datasheet

 IRLI640GPBF cross reference
 IRLI640GPBF equivalent finder
 IRLI640GPBF lookup
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