IRFL1006 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: IRFL1006
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.1 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 2.3 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 18 nS
   Cossⓘ - Capacitancia de salida: 55 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.22 Ohm
   Paquete / Cubierta: SOT223

Búsqueda de reemplazo de MOSFET IRFL1006

IRFL1006 Datasheet (PDF)

..1. Size:129K international rectifier
irfl1006pbf.pdf

PD - 95316IRFL1006PbFHEXFET Power MOSFET Surface MountD Advanced Process TechnologyVDSS = 60V Dynamic dv/dt Rating Fast SwitchingRDS(on) = 0.22 Fully Avalanche RatedG Lead-FreeID = 1.6ASDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per silicon area. This benefi

..2. Size:127K international rectifier
irfl1006.pdf

PD - 91876IRFL1006HEXFET Power MOSFET Surface MountD Advanced Process TechnologyVDSS = 60V Dynamic dv/dt Rating Fast SwitchingRDS(on) = 0.22 Fully Avalanche RatedGID = 1.6ASDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per silicon area. This benefit,combined wi

9.1. Size:197K international rectifier
irfl110pbf.pdf

PD - 95317IRFL110PbFHEXFET Power MOSFET Surface MountD Available in Tape & ReelVDSS = 100V Dynamic dv/dt Rating Repetitive Avalanche Rated Fast SwitchingRDS(on) = 0.54 Ease of ParallelingG Simple Drive Requirements Lead-FreeID = 1.5ASDescriptionThird Generation HEXFETs from International Rectifierprovide the designer with the best combination of fast

9.2. Size:244K international rectifier
irfl110.pdf

PD - 90861AIRFL110HEXFET Power MOSFET Surface MountD Available in Tape & ReelVDSS = 100V Dynamic dv/dt Rating Repetitive Avalanche Rated Fast SwitchingRDS(on) = 0.54 Ease of ParallelingG Simple Drive RequirementsID = 1.5ASDescriptionThird Generation HEXFETs from International Rectifierprovide the designer with the best combination of fastswitching, rug

9.3. Size:1503K vishay
irfl110 sihfl110.pdf

IRFL110, SiHFL110Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) 100 Surface MountRDS(on) ()VGS = 10 V 0.54 Available in Tape and ReelQg (Max.) (nC) 8.3 Dynamic dV/dt Rating Repetitive Avalanche RatedQgs (nC) 2.3 Fast SwitchingQgd (nC) 3.8 Ease of Paralleling Simple Drive R

9.4. Size:1977K cn vbsemi
irfl110tr.pdf

IRFL110TRwww.VBsemi.twN-Channel 100-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.100 at VGS = 10 V 5.0 TrenchFET Power MOSFETs1000.120 at VGS = 4.5 V 4.5 175 C Maximum Junction Temperature Compliant to RoHS Directive 2002/95/ECDSOT-223D GSDGSN-Channel MOSFET AB

Otros transistores... IRFIZ34E , IRFIZ34N , IRFIZ44A , IRFIZ44N , IRFIZ46N , IRFIZ48N , IRFL014 , IRFL024N , K4145 , IRFL110 , IRFL210 , IRFL214 , IRFL4105 , IRFL4310 , IRFL9014 , IRFL9110 , IRFM014A .

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