IRFL1006 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRFL1006

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2.1 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 2.3 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 18 nS

Cossⓘ - Capacitancia de salida: 55 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.22 Ohm

Encapsulados: SOT223

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IRFL1006 datasheet

 ..1. Size:129K  international rectifier
 irfl1006pbf.pdf pdf_icon

IRFL1006

PD - 95316 IRFL1006PbF HEXFET Power MOSFET Surface Mount D Advanced Process Technology VDSS = 60V Dynamic dv/dt Rating Fast Switching RDS(on) = 0.22 Fully Avalanche Rated G Lead-Free ID = 1.6A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefi

 ..2. Size:127K  international rectifier
 irfl1006.pdf pdf_icon

IRFL1006

PD - 91876 IRFL1006 HEXFET Power MOSFET Surface Mount D Advanced Process Technology VDSS = 60V Dynamic dv/dt Rating Fast Switching RDS(on) = 0.22 Fully Avalanche Rated G ID = 1.6A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined wi

 9.1. Size:197K  international rectifier
 irfl110pbf.pdf pdf_icon

IRFL1006

PD - 95317 IRFL110PbF HEXFET Power MOSFET Surface Mount D Available in Tape & Reel VDSS = 100V Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching RDS(on) = 0.54 Ease of Paralleling G Simple Drive Requirements Lead-Free ID = 1.5A S Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast

 9.2. Size:244K  international rectifier
 irfl110.pdf pdf_icon

IRFL1006

PD - 90861A IRFL110 HEXFET Power MOSFET Surface Mount D Available in Tape & Reel VDSS = 100V Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching RDS(on) = 0.54 Ease of Paralleling G Simple Drive Requirements ID = 1.5A S Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, rug

MOSTRAR MÁS

Otros transistores... IRFIZ34E, IRFIZ34N, IRFIZ44A, IRFIZ44N, IRFIZ46N, IRFIZ48N, IRFL014, IRFL024N, 7N65, IRFL110, IRFL210, IRFL214, IRFL4105, IRFL4310, IRFL9014, IRFL9110, IRFM014A