IRFL1006 - описание и поиск аналогов

PD - 95316 IRFL1006PbF HEXFET Power MOSFET Surface Mount D Advanced Process Technology VDSS = 60V Dynamic dv/dt Rating Fast Switching RDS(on) = 0.22 Fully Avalanche Rated G Lead-Free ID = 1.6A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefi

PD - 91876 IRFL1006 HEXFET Power MOSFET Surface Mount D Advanced Process Technology VDSS = 60V Dynamic dv/dt Rating Fast Switching RDS(on) = 0.22 Fully Avalanche Rated G ID = 1.6A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined wi

PD - 95317 IRFL110PbF HEXFET Power MOSFET Surface Mount D Available in Tape & Reel VDSS = 100V Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching RDS(on) = 0.54 Ease of Paralleling G Simple Drive Requirements Lead-Free ID = 1.5A S Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast

PD - 90861A IRFL110 HEXFET Power MOSFET Surface Mount D Available in Tape & Reel VDSS = 100V Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching RDS(on) = 0.54 Ease of Paralleling G Simple Drive Requirements ID = 1.5A S Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, rug

IRFL110, SiHFL110 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) 100 Surface Mount RDS(on) ( )VGS = 10 V 0.54 Available in Tape and Reel Qg (Max.) (nC) 8.3 Dynamic dV/dt Rating Repetitive Avalanche Rated Qgs (nC) 2.3 Fast Switching Qgd (nC) 3.8 Ease of Paralleling Simple Drive R

IRFL110TR www.VBsemi.tw N-Channel 100-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.100 at VGS = 10 V 5.0 TrenchFET Power MOSFETs 100 0.120 at VGS = 4.5 V 4.5 175 C Maximum Junction Temperature Compliant to RoHS Directive 2002/95/EC D SOT-223 D G S D G S N-Channel MOSFET AB