IRFL1006 Datasheet. Specs and Replacement

Type Designator: IRFL1006  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 2.3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 18 nS

Cossⓘ - Output Capacitance: 55 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.22 Ohm

Package: SOT223

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IRFL1006 substitution

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IRFL1006 datasheet

 ..1. Size:129K  international rectifier
 irfl1006pbf.pdf pdf_icon

IRFL1006

PD - 95316 IRFL1006PbF HEXFET Power MOSFET Surface Mount D Advanced Process Technology VDSS = 60V Dynamic dv/dt Rating Fast Switching RDS(on) = 0.22 Fully Avalanche Rated G Lead-Free ID = 1.6A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefi... See More ⇒

 ..2. Size:127K  international rectifier
 irfl1006.pdf pdf_icon

IRFL1006

PD - 91876 IRFL1006 HEXFET Power MOSFET Surface Mount D Advanced Process Technology VDSS = 60V Dynamic dv/dt Rating Fast Switching RDS(on) = 0.22 Fully Avalanche Rated G ID = 1.6A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined wi... See More ⇒

 9.1. Size:197K  international rectifier
 irfl110pbf.pdf pdf_icon

IRFL1006

PD - 95317 IRFL110PbF HEXFET Power MOSFET Surface Mount D Available in Tape & Reel VDSS = 100V Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching RDS(on) = 0.54 Ease of Paralleling G Simple Drive Requirements Lead-Free ID = 1.5A S Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast ... See More ⇒

 9.2. Size:244K  international rectifier
 irfl110.pdf pdf_icon

IRFL1006

PD - 90861A IRFL110 HEXFET Power MOSFET Surface Mount D Available in Tape & Reel VDSS = 100V Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching RDS(on) = 0.54 Ease of Paralleling G Simple Drive Requirements ID = 1.5A S Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, rug... See More ⇒

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Detailed specifications: IRFIZ34E, IRFIZ34N, IRFIZ44A, IRFIZ44N, IRFIZ46N, IRFIZ48N, IRFL014, IRFL024N, 7N65, IRFL110, IRFL210, IRFL214, IRFL4105, IRFL4310, IRFL9014, IRFL9110, IRFM014A

Keywords - IRFL1006 MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs