IRLIZ34NPBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRLIZ34NPBF

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 37 W

Tensión drenaje-fuente (Vds): 55 V

Tensión compuerta-fuente (Vgs): 16 V

Corriente continua de drenaje (Id): 22 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 2 V

Tiempo de elevación (tr): 100 nS

Conductancia de drenaje-sustrato (Cd): 220 pF

Resistencia drenaje-fuente RDS(on): 0.035 Ohm

Empaquetado / Estuche: TO220F

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IRLIZ34NPBF Datasheet (PDF)

1.1. irliz34npbf.pdf Size:258K _upd

PD - 95455 IRLIZ34NPbF HEXFET® Power MOSFET l Logic-Level Gate Drive l Advanced Process Technology D l Isolated Package VDSS = 55V l High Voltage Isolation = 2.5KVRMS … l Sink to Lead Creepage Dist. = 4.8mm RDS(on) = 0.035Ω l Fully Avalanche Rated G l Lead-Free ID = 22A Description S Fifth Generation HEXFETs from International Rectifier utilize advanced processing technique

2.1. irliz34n.pdf Size:105K _international_rectifier

PD - 9.1329B IRLIZ34N HEXFET� Power MOSFET Logic-Level Gate Drive D Advanced Process Technology VDSS = 55V Isolated Package High Voltage Isolation = 2.5KVRMS RDS(on) = 0.035? Sink to Lead Creepage Dist. = 4.8mm G Fully Avalanche Rated ID = 22A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest po

3.1. irliz34gpbf.pdf Size:1638K _upd

IRLIZ34G, SiHLIZ34G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Isolated Package VDS (V) 60 Available • High Voltage Isolation = 2.5 kVRMS (t = 60 s; RDS(on) (Ω)VGS = 5.0 V 0.050 f = 60 Hz) RoHS* COMPLIANT Qg (Max.) (nC) 35 • Sink to Lead Creepage Distance 4.8 mm Qgs (nC) 7.1 • Logic-Level Gate Drive Qgd (nC) 25 • RDS(on) Specified at VGS = 4 V and 5 V

3.2. irliz34g.pdf Size:169K _international_rectifier

3.3. irliz34gpbf.pdf Size:1006K _international_rectifier

PD- 95656 IRLIZ34GPbF � Lead-Free 7/26/04 Document Number: 91317 www.vishay.com 1 IRLIZ34GPbF Document Number: 91317 www.vishay.com 2 IRLIZ34GPbF Document Number: 91317 www.vishay.com 3 IRLIZ34GPbF Document Number: 91317 www.vishay.com 4 IRLIZ34GPbF Document Number: 91317 www.vishay.com 5 IRLIZ34GPbF Document Number: 91317 www.vishay.com 6 IRLIZ34GPbF Peak Diode Recover

3.4. irliz34g sihliz34g.pdf Size:1637K _vishay

IRLIZ34G, SiHLIZ34G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY � Isolated Package VDS (V) 60 Available � High Voltage Isolation = 2.5 kVRMS (t = 60 s; RDS(on) (?)VGS = 5.0 V 0.050 f = 60 Hz) RoHS* COMPLIANT Qg (Max.) (nC) 35 � Sink to Lead Creepage Distance 4.8 mm Qgs (nC) 7.1 � Logic-Level Gate Drive Qgd (nC) 25 � RDS(on) Specified at VGS = 4 V and 5 V � Fast Switch

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