Справочник MOSFET. IRLIZ34NPBF

 

IRLIZ34NPBF MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: IRLIZ34NPBF
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 37 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 55 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 16 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 2 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 22 A
   Tjⓘ - Максимальная температура канала: 175 °C
   Qgⓘ - Общий заряд затвора: 25 nC
   trⓘ - Время нарастания: 100 ns
   Cossⓘ - Выходная емкость: 220 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.035 Ohm
   Тип корпуса: TO220F

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IRLIZ34NPBF Datasheet (PDF)

 ..1. Size:258K  international rectifier
 irliz34npbf.pdf

IRLIZ34NPBF IRLIZ34NPBF

PD - 95455IRLIZ34NPbFHEXFET Power MOSFETl Logic-Level Gate Drivel Advanced Process TechnologyDl Isolated PackageVDSS = 55Vl High Voltage Isolation = 2.5KVRMS l Sink to Lead Creepage Dist. = 4.8mmRDS(on) = 0.035l Fully Avalanche Rated Gl Lead-FreeID = 22ADescription SFifth Generation HEXFETs from International Rectifierutilize advanced processing technique

 6.1. Size:105K  international rectifier
 irliz34n.pdf

IRLIZ34NPBF IRLIZ34NPBF

PD - 9.1329BIRLIZ34NHEXFET Power MOSFET Logic-Level Gate DriveD Advanced Process TechnologyVDSS = 55V Isolated Package High Voltage Isolation = 2.5KVRMS RDS(on) = 0.035 Sink to Lead Creepage Dist. = 4.8mmG Fully Avalanche RatedID = 22ASDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieve thelow

 7.1. Size:349K  1
 irliz34a irlw34a.pdf

IRLIZ34NPBF IRLIZ34NPBF

 7.2. Size:1006K  international rectifier
 irliz34gpbf.pdf

IRLIZ34NPBF IRLIZ34NPBF

PD- 95656IRLIZ34GPbF Lead-Free7/26/04Document Number: 91317 www.vishay.com1IRLIZ34GPbFDocument Number: 91317 www.vishay.com2IRLIZ34GPbFDocument Number: 91317 www.vishay.com3IRLIZ34GPbFDocument Number: 91317 www.vishay.com4IRLIZ34GPbFDocument Number: 91317 www.vishay.com5IRLIZ34GPbFDocument Number: 91317 www.vishay.com6IRLIZ34GPbFPeak Diode Re

 7.3. Size:169K  international rectifier
 irliz34g.pdf

IRLIZ34NPBF IRLIZ34NPBF

 7.4. Size:1637K  vishay
 irliz34g sihliz34g.pdf

IRLIZ34NPBF IRLIZ34NPBF

IRLIZ34G, SiHLIZ34GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 60Available High Voltage Isolation = 2.5 kVRMS (t = 60 s;RDS(on) ()VGS = 5.0 V 0.050f = 60 Hz)RoHS*COMPLIANTQg (Max.) (nC) 35 Sink to Lead Creepage Distance 4.8 mmQgs (nC) 7.1 Logic-Level Gate DriveQgd (nC) 25 RDS(on) Specified at VGS = 4 V and 5 V

 7.5. Size:1638K  vishay
 irliz34gpbf sihliz34g.pdf

IRLIZ34NPBF IRLIZ34NPBF

IRLIZ34G, SiHLIZ34GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 60Available High Voltage Isolation = 2.5 kVRMS (t = 60 s;RDS(on) ()VGS = 5.0 V 0.050f = 60 Hz)RoHS*COMPLIANTQg (Max.) (nC) 35 Sink to Lead Creepage Distance 4.8 mmQgs (nC) 7.1 Logic-Level Gate DriveQgd (nC) 25 RDS(on) Specified at VGS = 4 V and 5 V

 7.6. Size:275K  inchange semiconductor
 irliz34g.pdf

IRLIZ34NPBF IRLIZ34NPBF

iscN-Channel MOSFET Transistor IRLIZ34GFEATURESLow drain-source on-resistance:RDS(ON) 50m @V =5VGSEnhancement mode:Vth = 1.0 to 2.0V (VDS = 10 V, ID=0.25mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER

Другие MOSFET... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
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