IRLIZ34NPBF MOSFET. Datasheet pdf. Equivalent
Type Designator: IRLIZ34NPBF
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 37 W
Maximum Drain-Source Voltage |Vds|: 55 V
Maximum Gate-Source Voltage |Vgs|: 16 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 2 V
Maximum Drain Current |Id|: 22 A
Maximum Junction Temperature (Tj): 175 °C
Rise Time (tr): 100 nS
Drain-Source Capacitance (Cd): 220 pF
Maximum Drain-Source On-State Resistance (Rds): 0.035 Ohm
Package: TO220F
IRLIZ34NPBF Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRLIZ34NPBF Datasheet (PDF)
1.1. irliz34npbf.pdf 
Size:258K _upd
PD - 95455 IRLIZ34NPbF HEXFET® Power MOSFET l Logic-Level Gate Drive l Advanced Process Technology D l Isolated Package VDSS = 55V l High Voltage Isolation = 2.5KVRMS … l Sink to Lead Creepage Dist. = 4.8mm RDS(on) = 0.035Ω l Fully Avalanche Rated G l Lead-Free ID = 22A Description S Fifth Generation HEXFETs from International Rectifier utilize advanced processing technique
2.1. irliz34n.pdf Size:105K _international_rectifier
PD - 9.1329B IRLIZ34N HEXFET® Power MOSFET Logic-Level Gate Drive D Advanced Process Technology VDSS = 55V Isolated Package High Voltage Isolation = 2.5KVRMS RDS(on) = 0.035? Sink to Lead Creepage Dist. = 4.8mm G Fully Avalanche Rated ID = 22A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest po
3.1. irliz34gpbf.pdf Size:1638K _upd
IRLIZ34G, SiHLIZ34G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Isolated Package VDS (V) 60 Available • High Voltage Isolation = 2.5 kVRMS (t = 60 s; RDS(on) (Ω)VGS = 5.0 V 0.050 f = 60 Hz) RoHS* COMPLIANT Qg (Max.) (nC) 35 • Sink to Lead Creepage Distance 4.8 mm Qgs (nC) 7.1 • Logic-Level Gate Drive Qgd (nC) 25 • RDS(on) Specified at VGS = 4 V and 5 V
3.2. irliz34g.pdf Size:169K _international_rectifier
3.3. irliz34gpbf.pdf Size:1006K _international_rectifier
PD- 95656 IRLIZ34GPbF • Lead-Free 7/26/04 Document Number: 91317 www.vishay.com 1 IRLIZ34GPbF Document Number: 91317 www.vishay.com 2 IRLIZ34GPbF Document Number: 91317 www.vishay.com 3 IRLIZ34GPbF Document Number: 91317 www.vishay.com 4 IRLIZ34GPbF Document Number: 91317 www.vishay.com 5 IRLIZ34GPbF Document Number: 91317 www.vishay.com 6 IRLIZ34GPbF Peak Diode Recover
3.4. irliz34g sihliz34g.pdf Size:1637K _vishay
IRLIZ34G, SiHLIZ34G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Isolated Package VDS (V) 60 Available • High Voltage Isolation = 2.5 kVRMS (t = 60 s; RDS(on) (?)VGS = 5.0 V 0.050 f = 60 Hz) RoHS* COMPLIANT Qg (Max.) (nC) 35 • Sink to Lead Creepage Distance 4.8 mm Qgs (nC) 7.1 • Logic-Level Gate Drive Qgd (nC) 25 • RDS(on) Specified at VGS = 4 V and 5 V • Fast Switch
Datasheet: IRLI620GPBF , IRLI630GPBF , IRLI640GPBF , IRLIB4343 , IRLIB9343PBF , IRLIZ14GPBF , IRLIZ24NPBF , IRLIZ34GPBF , IRF250 , IRLIZ44GPBF , IRLIZ44NPBF , IRFF9111 , IRFF9112 , IRFF9113 , IRFF9131 , IRFF9132 , IRFF9133 .
LIST
Last Update
MOSFET: RUS100N02 | RUR040N02TL | RUR040N02FRA | RUR020N02TL | RUQ050N02TR | RUQ050N02FRA | RUM003N02T2L | RUM002N05T2L | RUM002N02T2L | RUM001L02 | RUL035N02TR | RUF025N02TL | RUF015N02TL | RUE003N02TL | RUE002N02TL |