IRHQ567110 Todos los transistores

 

IRHQ567110 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRHQ567110

Tipo de FET: MOSFET

Polaridad de transistor: NP

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 12 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 4.6(2.8) A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.27(0.96) Ohm

Encapsulados: LCC28

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IRHQ567110 datasheet

 ..1. Size:198K  international rectifier
irhq567110.pdf pdf_icon

IRHQ567110

PD - 94057B IRHQ567110 100V, Combination 2N-2P-CHANNEL RADIATION HARDENED RAD-Hard HEXFET POWER MOSFET TECHNOLOGY SURFACE MOUNT (LCC-28) 4# 4 Product Summary Part Number Radiation Level RDS(on) ID CHANNEL IRHQ567110 100K Rads (Si) 0.27 4.6A N IRHQ563110 300K Rads (Si) 0.29 4.6A N IRHQ567110 100K Rads (Si) 0.96 -2.8A P IRHQ563110 300K Rads (Si) 0.98 -

 9.1. Size:128K  international rectifier
irhq57110.pdf pdf_icon

IRHQ567110

PD - 94211 IRHQ57110 100V, Quad N-CHANNEL RADIATION HARDENED RAD-Hard HEXFET POWER MOSFET TECHNOLOGY SURFACE MOUNT (LCC-28) 4# 4 Product Summary Part Number Radiation Level RDS(on) ID IRHQ57110 100K Rads (Si) 0.27 4.6A IRHQ53110 300K Rads (Si) 0.27 4.6A IRHQ54110 600K Rads (Si) 0.27 4.6A IRHQ58110 1000K Rads (Si) 0.29 4.6A LCC-28 International Rectif

 9.2. Size:128K  international rectifier
irhq597110.pdf pdf_icon

IRHQ567110

PD - 94210 IRHQ597110 100V, Quad P-CHANNEL RADIATION HARDENED RAD-Hard HEXFET POWER MOSFET TECHNOLOGY SURFACE MOUNT (LCC-28) 4# 4 Product Summary Part Number Radiation Level RDS(on) ID IRHQ597110 100K Rads (Si) 0.96 -2.8A IRHQ593110 300K Rads (Si) 0.98 -2.8A LCC-28 International Rectifier s RAD-HardTM HEXFET MOSFET Features Technology provides high p

 9.3. Size:131K  international rectifier
irhq57214se.pdf pdf_icon

IRHQ567110

PD - 93881B RADIATION HARDENED IRHQ57214SE POWER MOSFET 250V, QUAD N-CHANNEL SURFACE MOUNT (LCC-28) TECHNOLOGY 4 4# c Product Summary Part Number Radiation Level RDS(on) ID IRHQ57214SE 100K Rads (Si) 1.5 1.9A LCC-28 International Rectifier s R5TM technology provides high performance power MOSFETs for space appli- Features cations. These devices have been characterized

Otros transistores... IRFR8314PBF , IRFU7440PBF , IRFU7540PBF , IRFU7546PBF , IRFU7740PBF , IRFU7746PBF , IRHE7110 , IRHE9110 , AO3400 , IRHQ57110 , IRHQ57214SE , IRHQ597110 , IRHQ6110 , IRHQ7110 , IRHQ9110 , IRLU3705ZPBF , IRLU3714 .

History: TMAN7N90 | F12N65 | 2SK3064 | DMTH6009LK3

 

 

 


History: TMAN7N90 | F12N65 | 2SK3064 | DMTH6009LK3

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