All MOSFET. IRHQ567110 Datasheet

 

IRHQ567110 Datasheet and Replacement


   Type Designator: IRHQ567110
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pdⓘ - Maximum Power Dissipation: 12 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 4.6(2.8) A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.27(0.96) Ohm
   Package: LCC28
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IRHQ567110 Datasheet (PDF)

 ..1. Size:198K  international rectifier
 irhq567110.pdf pdf_icon

IRHQ567110

PD - 94057BIRHQ567110100V, Combination 2N-2P-CHANNEL RADIATION HARDENEDRAD-Hard HEXFET POWER MOSFETTECHNOLOGY SURFACE MOUNT (LCC-28) 4#4 Product Summary Part Number Radiation Level RDS(on) ID CHANNEL IRHQ567110 100K Rads (Si) 0.27 4.6A N IRHQ563110 300K Rads (Si) 0.29 4.6A N IRHQ567110 100K Rads (Si) 0.96 -2.8A P IRHQ563110 300K Rads (Si) 0.98 -

 9.1. Size:128K  international rectifier
 irhq57110.pdf pdf_icon

IRHQ567110

PD - 94211 IRHQ57110100V, Quad N-CHANNEL RADIATION HARDENEDRAD-Hard HEXFET POWER MOSFETTECHNOLOGY SURFACE MOUNT (LCC-28) 4#4 Product Summary Part Number Radiation Level RDS(on) IDIRHQ57110 100K Rads (Si) 0.27 4.6AIRHQ53110 300K Rads (Si) 0.27 4.6AIRHQ54110 600K Rads (Si) 0.27 4.6AIRHQ58110 1000K Rads (Si) 0.29 4.6A LCC-28International Rectif

 9.2. Size:128K  international rectifier
 irhq597110.pdf pdf_icon

IRHQ567110

PD - 94210IRHQ597110100V, Quad P-CHANNEL RADIATION HARDENEDRAD-Hard HEXFET POWER MOSFETTECHNOLOGY SURFACE MOUNT (LCC-28) 4#4 Product Summary Part Number Radiation Level RDS(on) ID IRHQ597110 100K Rads (Si) 0.96 -2.8A IRHQ593110 300K Rads (Si) 0.98 -2.8A LCC-28International Rectifiers RAD-HardTM HEXFET MOSFETFeatures:Technology provides high p

 9.3. Size:131K  international rectifier
 irhq57214se.pdf pdf_icon

IRHQ567110

PD - 93881BRADIATION HARDENED IRHQ57214SEPOWER MOSFET250V, QUAD N-CHANNELSURFACE MOUNT (LCC-28)TECHNOLOGY44# cProduct Summary Part Number Radiation Level RDS(on) ID IRHQ57214SE 100K Rads (Si) 1.5 1.9ALCC-28International Rectifiers R5TM technology provideshigh performance power MOSFETs for space appli- Features:cations. These devices have been characterized

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Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: BSZ035N03LSG | SVF9N90F

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