IRLR3705ZPBF Todos los transistores

 

IRLR3705ZPBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IRLR3705ZPBF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 130 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 55 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 16 V
   |Id|ⓘ - Corriente continua de drenaje: 42 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 150 nS
   Cossⓘ - Capacitancia de salida: 420 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.008 Ohm
   Paquete / Cubierta: TO252
 
   - Selección ⓘ de transistores por parámetros

 

IRLR3705ZPBF Datasheet (PDF)

 ..1. Size:340K  international rectifier
 irlr3705zpbf irlu3705zpbf.pdf pdf_icon

IRLR3705ZPBF

PD - 95956AIRLR3705ZPbFIRLU3705ZPbFFeatures Logic Level Advanced Process TechnologyHEXFET Power MOSFET Ultra Low On-ResistanceD 175C Operating TemperatureVDSS = 55V Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free RDS(on) = 8.0mGDescriptionID = 42AThis HEXFET Power MOSFET utilizes the latest Sprocessing techniques to achieve extremel

 5.1. Size:287K  international rectifier
 auirlr3705ztr.pdf pdf_icon

IRLR3705ZPBF

PD - 97611AUTOMOTIVE GRADEAUIRLR3705ZFeaturesHEXFET Power MOSFET Logic Level Advanced Process TechnologyDV(BR)DSS 55V Ultra Low On-Resistance 175C Operating Temperature RDS(on) max.8.0m Fast SwitchingGID (Silicon Limited)89A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant SID (Package Limited)42A Automotiv

 5.2. Size:670K  infineon
 auirlr3705z.pdf pdf_icon

IRLR3705ZPBF

AUTOMOTIVE GRADE AUIRLR3705Z Features HEXFET Power MOSFET Advanced Process Technology Logic-Level VDSS 55V Ultra Low On-Resistance RDS(on) max. 8.0m 175C Operating Temperature Fast Switching ID (Silicon Limited) 89A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant ID (Package Limited) 42A Automotive Quali

 5.3. Size:242K  inchange semiconductor
 irlr3705z.pdf pdf_icon

IRLR3705ZPBF

isc N-Channel MOSFET Transistor IRLR3705Z, IIRLR3705ZFEATURESStatic drain-source on-resistance:RDS(on)8.0mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast SwitchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 55 VDSSV Ga

MOSTRAR MÁS

Otros transistores... IRLU3705ZPBF , IRLU3714 , IRLU3714PBF , IRLU3714ZPBF , IRLU3715 , IRLU3715PBF , IRLU3715ZPBF , IRLU3717PBF , 12N60 , IRLR3714 , IRLR3714PBF , IRLR3714ZPBF , IRLR3715 , IRLR3715PBF , IRLR3715ZPBF , IRLR3717PBF , IRLR3802PBF .

History: NCEP090N20T

 

 
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