IRLR3705ZPBF PDF and Equivalents Search

 

IRLR3705ZPBF Specs and Replacement

Type Designator: IRLR3705ZPBF

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 130 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V

|Id| ⓘ - Maximum Drain Current: 42 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 150 nS

Cossⓘ - Output Capacitance: 420 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm

Package: TO252

IRLR3705ZPBF substitution

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IRLR3705ZPBF datasheet

 ..1. Size:340K  international rectifier
irlr3705zpbf irlu3705zpbf.pdf pdf_icon

IRLR3705ZPBF

PD - 95956A IRLR3705ZPbF IRLU3705ZPbF Features Logic Level Advanced Process Technology HEXFET Power MOSFET Ultra Low On-Resistance D 175 C Operating Temperature VDSS = 55V Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free RDS(on) = 8.0m G Description ID = 42A This HEXFET Power MOSFET utilizes the latest S processing techniques to achieve extremel... See More ⇒

 5.1. Size:287K  international rectifier
auirlr3705ztr.pdf pdf_icon

IRLR3705ZPBF

PD - 97611 AUTOMOTIVE GRADE AUIRLR3705Z Features HEXFET Power MOSFET Logic Level Advanced Process Technology D V(BR)DSS 55V Ultra Low On-Resistance 175 C Operating Temperature RDS(on) max. 8.0m Fast Switching G ID (Silicon Limited) 89A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant S ID (Package Limited) 42A Automotiv... See More ⇒

 5.2. Size:670K  infineon
auirlr3705z.pdf pdf_icon

IRLR3705ZPBF

AUTOMOTIVE GRADE AUIRLR3705Z Features HEXFET Power MOSFET Advanced Process Technology Logic-Level VDSS 55V Ultra Low On-Resistance RDS(on) max. 8.0m 175 C Operating Temperature Fast Switching ID (Silicon Limited) 89A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant ID (Package Limited) 42A Automotive Quali... See More ⇒

 5.3. Size:242K  inchange semiconductor
irlr3705z.pdf pdf_icon

IRLR3705ZPBF

isc N-Channel MOSFET Transistor IRLR3705Z, IIRLR3705Z FEATURES Static drain-source on-resistance RDS(on) 8.0m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast Switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 55 V DSS V Ga... See More ⇒

Detailed specifications: IRLU3705ZPBF, IRLU3714, IRLU3714PBF, IRLU3714ZPBF, IRLU3715, IRLU3715PBF, IRLU3715ZPBF, IRLU3717PBF, STP75NF75, IRLR3714, IRLR3714PBF, IRLR3714ZPBF, IRLR3715, IRLR3715PBF, IRLR3715ZPBF, IRLR3717PBF, IRLR3802PBF

Keywords - IRLR3705ZPBF MOSFET specs

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