All MOSFET. IRLR3705ZPBF Datasheet

 

IRLR3705ZPBF MOSFET. Datasheet pdf. Equivalent


   Type Designator: IRLR3705ZPBF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 130 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 42 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 44 nC
   trⓘ - Rise Time: 150 nS
   Cossⓘ - Output Capacitance: 420 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
   Package: TO252

 IRLR3705ZPBF Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRLR3705ZPBF Datasheet (PDF)

 ..1. Size:340K  international rectifier
 irlr3705zpbf irlu3705zpbf.pdf

IRLR3705ZPBF IRLR3705ZPBF

PD - 95956AIRLR3705ZPbFIRLU3705ZPbFFeatures Logic Level Advanced Process TechnologyHEXFET Power MOSFET Ultra Low On-ResistanceD 175C Operating TemperatureVDSS = 55V Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free RDS(on) = 8.0mGDescriptionID = 42AThis HEXFET Power MOSFET utilizes the latest Sprocessing techniques to achieve extremel

 ..2. Size:340K  infineon
 irlr3705zpbf irlu3705zpbf.pdf

IRLR3705ZPBF IRLR3705ZPBF

PD - 95956AIRLR3705ZPbFIRLU3705ZPbFFeatures Logic Level Advanced Process TechnologyHEXFET Power MOSFET Ultra Low On-ResistanceD 175C Operating TemperatureVDSS = 55V Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free RDS(on) = 8.0mGDescriptionID = 42AThis HEXFET Power MOSFET utilizes the latest Sprocessing techniques to achieve extremel

 5.1. Size:287K  international rectifier
 auirlr3705ztr.pdf

IRLR3705ZPBF IRLR3705ZPBF

PD - 97611AUTOMOTIVE GRADEAUIRLR3705ZFeaturesHEXFET Power MOSFET Logic Level Advanced Process TechnologyDV(BR)DSS 55V Ultra Low On-Resistance 175C Operating Temperature RDS(on) max.8.0m Fast SwitchingGID (Silicon Limited)89A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant SID (Package Limited)42A Automotiv

 5.2. Size:670K  infineon
 auirlr3705z.pdf

IRLR3705ZPBF IRLR3705ZPBF

AUTOMOTIVE GRADE AUIRLR3705Z Features HEXFET Power MOSFET Advanced Process Technology Logic-Level VDSS 55V Ultra Low On-Resistance RDS(on) max. 8.0m 175C Operating Temperature Fast Switching ID (Silicon Limited) 89A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant ID (Package Limited) 42A Automotive Quali

 5.3. Size:242K  inchange semiconductor
 irlr3705z.pdf

IRLR3705ZPBF IRLR3705ZPBF

isc N-Channel MOSFET Transistor IRLR3705Z, IIRLR3705ZFEATURESStatic drain-source on-resistance:RDS(on)8.0mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast SwitchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 55 VDSSV Ga

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: 2SK773 | APT10M19BVFRG | 2N4416DCSM | SVF13N50CFJ | SI2314EDS

 

 
Back to Top