IRLR3915PBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

IRLR3915PBF Datasheet (PDF)

..1. Size:322K international rectifier
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PD - 95090BIRLR3915PbFIRLU3915PbFFeaturesHEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance D 175C Operating Temperature VDSS = 55V Fast Switching Repetitive Avalanche Allowed up to TjmaxRDS(on) = 14m Lead-FreeGDescriptionID = 30ASThis HEXFET Power MOSFET utilizes the latestprocessing techniques to achieve extremely lowon-resista

6.1. Size:228K international rectifier
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PD - 97743AUTOMOTIVE GRADEAUIRLR3915FeaturesHEXFET Power MOSFETl Advanced Planar Technologyl Logic-Level Gate DriveDV(BR)DSS55Vl Low On-ResistanceRDS(on) typ.12ml 175C Operating Temperaturel Fast Switchingmax 14mGl Fully Avalanche RatedID (Silicon Limited)61Al Repetitive Avalanche AllowedSup to Tjmax ID (Package Limited)30Al Lead-Free, R

6.2. Size:581K international rectifier
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PD - 94543AUTOMOTIVE MOSFET IRLR3915IRLU3915FeaturesHEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance D 175C Operating Temperature VDSS = 55V Fast Switching Repetitive Avalanche Allowed up to TjmaxRDS(on) = 14mGDescriptionID = 30ASpecifically designed for Automotive applications,Sthis HEXFET Power MOSFET utilizes the

6.3. Size:241K inchange semiconductor
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isc N-Channel MOSFET Transistor IRLR3915, IIRLR3915FEATURESStatic drain-source on-resistance:RDS(on)14mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 55 VDSSV Gate-

Otros transistores... IRLR3714 , IRLR3714PBF , IRLR3714ZPBF , IRLR3715 , IRLR3715PBF , IRLR3715ZPBF , IRLR3717PBF , IRLR3802PBF , AON7410 , IRLR4343 , IRLR4343PBF , IRLU3802PBF , IRLU3915PBF , IRLU4343 , IRLU4343PBF , IRLR7807ZCPBF , IRLR7807ZPBF .