IRLR3915PBF PDF and Equivalents Search

 

IRLR3915PBF Specs and Replacement

Type Designator: IRLR3915PBF

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 120 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V

|Id| ⓘ - Maximum Drain Current: 30 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 51 nS

Cossⓘ - Output Capacitance: 390 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.014 Ohm

Package: TO252

IRLR3915PBF substitution

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IRLR3915PBF datasheet

 ..1. Size:322K  international rectifier
 irlr3915pbf irlu3915pbf.pdf pdf_icon

IRLR3915PBF

PD - 95090B IRLR3915PbF IRLU3915PbF Features HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance D 175 C Operating Temperature VDSS = 55V Fast Switching Repetitive Avalanche Allowed up to Tjmax RDS(on) = 14m Lead-Free G Description ID = 30A S This HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resista... See More ⇒

 6.1. Size:228K  international rectifier
 auirlr3915.pdf pdf_icon

IRLR3915PBF

PD - 97743 AUTOMOTIVE GRADE AUIRLR3915 Features HEXFET Power MOSFET l Advanced Planar Technology l Logic-Level Gate Drive D V(BR)DSS 55V l Low On-Resistance RDS(on) typ. 12m l 175 C Operating Temperature l Fast Switching max 14m G l Fully Avalanche Rated ID (Silicon Limited) 61A l Repetitive Avalanche Allowed S up to Tjmax ID (Package Limited) 30A l Lead-Free, R... See More ⇒

 6.2. Size:581K  international rectifier
 irlr3915.pdf pdf_icon

IRLR3915PBF

PD - 94543 AUTOMOTIVE MOSFET IRLR3915 IRLU3915 Features HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance D 175 C Operating Temperature VDSS = 55V Fast Switching Repetitive Avalanche Allowed up to Tjmax RDS(on) = 14m G Description ID = 30A Specifically designed for Automotive applications, S this HEXFET Power MOSFET utilizes the ... See More ⇒

 6.3. Size:241K  inchange semiconductor
 irlr3915.pdf pdf_icon

IRLR3915PBF

isc N-Channel MOSFET Transistor IRLR3915, IIRLR3915 FEATURES Static drain-source on-resistance RDS(on) 14m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 55 V DSS V Gate-... See More ⇒

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Detailed specifications: IRLR3714, IRLR3714PBF, IRLR3714ZPBF, IRLR3715, IRLR3715PBF, IRLR3715ZPBF, IRLR3717PBF, IRLR3802PBF, SPP20N60C3, IRLR4343, IRLR4343PBF, IRLU3802PBF, IRLU3915PBF, IRLU4343, IRLU4343PBF, IRLR7807ZCPBF, IRLR7807ZPBF

Keywords - IRLR3915PBF MOSFET specs

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