IRLR8256PBF Todos los transistores

 

IRLR8256PBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IRLR8256PBF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 63 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 25 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 81 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 46 nS
   Cossⓘ - Capacitancia de salida: 453 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0057 Ohm
   Paquete / Cubierta: TO252
 

 Búsqueda de reemplazo de IRLR8256PBF MOSFET

   - Selección ⓘ de transistores por parámetros

 

IRLR8256PBF Datasheet (PDF)

 ..1. Size:284K  international rectifier
 irlr8256pbf.pdf pdf_icon

IRLR8256PBF

PD - 96208AIRLR8256PbFIRLU8256PbFApplicationsHEXFET Power MOSFETl High Frequency Synchronous BuckConverters for Computer Processor PowerVDSS RDS(on) maxQgl High Frequency Isolated DC-DC25V 5.7m 10nC Converters with Synchronous Rectification for Telecom and Industrial UseDBenefitsl Very Low RDS(on) at 4.5V VGSS Sl Ultra-Low Gate ImpedanceDG Gl Fully Char

 ..2. Size:284K  international rectifier
 irlu8256pbf irlr8256pbf.pdf pdf_icon

IRLR8256PBF

PD - 96208AIRLR8256PbFIRLU8256PbFApplicationsHEXFET Power MOSFETl High Frequency Synchronous BuckConverters for Computer Processor PowerVDSS RDS(on) maxQgl High Frequency Isolated DC-DC25V 5.7m 10nC Converters with Synchronous Rectification for Telecom and Industrial UseDBenefitsl Very Low RDS(on) at 4.5V VGSS Sl Ultra-Low Gate ImpedanceDG Gl Fully Char

 6.1. Size:242K  inchange semiconductor
 irlr8256.pdf pdf_icon

IRLR8256PBF

isc N-Channel MOSFET Transistor IRLR8256, IIRLR8256FEATURESStatic drain-source on-resistance:RDS(on)5.7mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh efficiencyABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 25 VDSSV Gat

 7.1. Size:363K  international rectifier
 irlu8259pbf irlr8259pbf.pdf pdf_icon

IRLR8256PBF

PD - 97360IRLR8259PbFIRLU8259PbFApplicationsHEXFET Power MOSFETl High Frequency Synchronous BuckConverters for Computer Processor Power VDSS RDS(on) maxQgl High Frequency Isolated DC-DC25V 8.7m 6.8nC Converters with Synchronous Rectification for Telecom and Industrial UseDBenefitsS Sl Very Low RDS(on) at 4.5V VGSDG Gl Ultra-Low Gate Impedancel Fully

MOSTRAR MÁS

Otros transistores... IRLU8726PBF , IRLU8729PBF , IRLU8743PBF , IRLU9343-701 , IRLR8203PBF , IRLR8103 , IRLR8103VPBF , IRLR8113PBF , IRF830 , IRLR8259PBF , IRLR8503 , IRLR8503PBF , IRLR8715CPBF , IRLR8721PBF , IRLR8721PBF-1 , IRLR8726PBF , IRLR8729PBF .

 

 
Back to Top

 


 
.