IRLR8256PBF Specs and Replacement
Type Designator: IRLR8256PBF
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 63 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 81 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 46 nS
Cossⓘ - Output Capacitance: 453 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0057 Ohm
Package: TO252
IRLR8256PBF substitution
- MOSFET ⓘ Cross-Reference Search
IRLR8256PBF datasheet
irlr8256pbf.pdf
PD - 96208A IRLR8256PbF IRLU8256PbF Applications HEXFET Power MOSFET l High Frequency Synchronous Buck Converters for Computer Processor Power VDSS RDS(on) max Qg l High Frequency Isolated DC-DC 25V 5.7m 10nC Converters with Synchronous Rectification for Telecom and Industrial Use D Benefits l Very Low RDS(on) at 4.5V VGS S S l Ultra-Low Gate Impedance D G G l Fully Char... See More ⇒
irlu8256pbf irlr8256pbf.pdf
PD - 96208A IRLR8256PbF IRLU8256PbF Applications HEXFET Power MOSFET l High Frequency Synchronous Buck Converters for Computer Processor Power VDSS RDS(on) max Qg l High Frequency Isolated DC-DC 25V 5.7m 10nC Converters with Synchronous Rectification for Telecom and Industrial Use D Benefits l Very Low RDS(on) at 4.5V VGS S S l Ultra-Low Gate Impedance D G G l Fully Char... See More ⇒
irlr8256.pdf
isc N-Channel MOSFET Transistor IRLR8256, IIRLR8256 FEATURES Static drain-source on-resistance RDS(on) 5.7m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High efficiency ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 25 V DSS V Gat... See More ⇒
irlu8259pbf irlr8259pbf.pdf
PD - 97360 IRLR8259PbF IRLU8259PbF Applications HEXFET Power MOSFET l High Frequency Synchronous Buck Converters for Computer Processor Power VDSS RDS(on) max Qg l High Frequency Isolated DC-DC 25V 8.7m 6.8nC Converters with Synchronous Rectification for Telecom and Industrial Use D Benefits S S l Very Low RDS(on) at 4.5V VGS D G G l Ultra-Low Gate Impedance l Fully ... See More ⇒
Detailed specifications: IRLU8726PBF, IRLU8729PBF, IRLU8743PBF, IRLU9343-701, IRLR8203PBF, IRLR8103, IRLR8103VPBF, IRLR8113PBF, 2N60, IRLR8259PBF, IRLR8503, IRLR8503PBF, IRLR8715CPBF, IRLR8721PBF, IRLR8721PBF-1, IRLR8726PBF, IRLR8729PBF
Keywords - IRLR8256PBF MOSFET specs
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History: ISCNH377B | FHF5N65B | SM6033NSG | FHF5N65C | RQA0008RXDQS | STL140N6F7 | RFL2N05
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