IRLU2703PBF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRLU2703PBF
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 45 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 16 V
|Id|ⓘ - Corriente continua de drenaje: 23 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 140 nS
Cossⓘ - Capacitancia de salida: 210 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.045 Ohm
Paquete / Cubierta: TO251
Búsqueda de reemplazo de IRLU2703PBF MOSFET
IRLU2703PBF datasheet
irlu2703pbf irlr2703pbf.pdf
PD- 95083A IRLR/U2703PbF HEXFET Power MOSFET l Logic-Level Gate Drive l Ultra Low On-Resistance D VDSS = 30V l Surface Mount (IRLR2703) l Straight Lead (IRLU2703) l Advanced Process Technology RDS(on) = 0.045 G l Fast Switching l Fully Avalanche Rated ID = 23A S l Lead-Free Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing te
irlr2703 irlu2703.pdf
PD- 95083A IRLR/U2703PbF HEXFET Power MOSFET l Logic-Level Gate Drive l Ultra Low On-Resistance D VDSS = 30V l Surface Mount (IRLR2703) l Straight Lead (IRLU2703) l Advanced Process Technology RDS(on) = 0.045 G l Fast Switching l Fully Avalanche Rated ID = 23A S l Lead-Free Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing te
irlu2703.pdf
isc N-Channel MOSFET Transistor IRLU2703 FEATURES With TO-251(IPAK) packaging High speed switching Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply DC-DC converters Motor control Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UN
irlr2705pbf irlu2705pbf.pdf
PD - 95062A IRLR2705PbF IRLU2705PbF l Logic-Level Gate Drive HEXFET Power MOSFET l Ultra Low On-Resistance D l Surface Mount (IRLR2705) VDSS = 55V l Straight Lead (IRLU2705) l Advanced Process Technology l Fast Switching RDS(on) = 0.040 G l Fully Avalanche Rated l Lead-Free ID = 28A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced p
Otros transistores... IRLR8721PBF , IRLR8721PBF-1 , IRLR8726PBF , IRLR8729PBF , IRLR8729PBF-1 , IRLR8743PBF , IRLR9343PBF , IRLU9343PBF , IRF9640 , IRLU2705PBF , IRLU2905ZPBF , IRLU3103PBF , IRLU3110ZPBF , IRLU3114ZPBF , IRLU3303PBF , IRLU3410PBF , IRLU3636PBF .
History: 8822 | APG40N10DF | SWP068R08ET | FQP4N20
History: 8822 | APG40N10DF | SWP068R08ET | FQP4N20
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