IRLU2703PBF Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRLU2703PBF  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 45 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 16 V

|Id|ⓘ - Corriente continua de drenaje: 23 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 140 nS

Cossⓘ - Capacitancia de salida: 210 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.045 Ohm

Encapsulados: TO251

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IRLU2703PBF datasheet

 ..1. Size:313K  international rectifier
 irlu2703pbf irlr2703pbf.pdf pdf_icon

IRLU2703PBF

PD- 95083A IRLR/U2703PbF HEXFET Power MOSFET l Logic-Level Gate Drive l Ultra Low On-Resistance D VDSS = 30V l Surface Mount (IRLR2703) l Straight Lead (IRLU2703) l Advanced Process Technology RDS(on) = 0.045 G l Fast Switching l Fully Avalanche Rated ID = 23A S l Lead-Free Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing te

 6.1. Size:313K  international rectifier
 irlr2703 irlu2703.pdf pdf_icon

IRLU2703PBF

PD- 95083A IRLR/U2703PbF HEXFET Power MOSFET l Logic-Level Gate Drive l Ultra Low On-Resistance D VDSS = 30V l Surface Mount (IRLR2703) l Straight Lead (IRLU2703) l Advanced Process Technology RDS(on) = 0.045 G l Fast Switching l Fully Avalanche Rated ID = 23A S l Lead-Free Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing te

 6.2. Size:261K  inchange semiconductor
 irlu2703.pdf pdf_icon

IRLU2703PBF

isc N-Channel MOSFET Transistor IRLU2703 FEATURES With TO-251(IPAK) packaging High speed switching Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply DC-DC converters Motor control Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UN

 7.1. Size:260K  international rectifier
 irlr2705pbf irlu2705pbf.pdf pdf_icon

IRLU2703PBF

PD - 95062A IRLR2705PbF IRLU2705PbF l Logic-Level Gate Drive HEXFET Power MOSFET l Ultra Low On-Resistance D l Surface Mount (IRLR2705) VDSS = 55V l Straight Lead (IRLU2705) l Advanced Process Technology l Fast Switching RDS(on) = 0.040 G l Fully Avalanche Rated l Lead-Free ID = 28A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced p

MOSTRAR MÁS

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