IRLU2703PBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRLU2703PBF
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 45 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 16 V
|Id|ⓘ - Corriente continua de drenaje: 23 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 140 nS
Cossⓘ - Capacitancia de salida: 210 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.045 Ohm
Paquete / Cubierta: TO251
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IRLU2703PBF Datasheet (PDF)
irlu2703pbf irlr2703pbf.pdf
PD- 95083AIRLR/U2703PbFHEXFET Power MOSFETl Logic-Level Gate Drivel Ultra Low On-Resistance DVDSS = 30Vl Surface Mount (IRLR2703)l Straight Lead (IRLU2703)l Advanced Process TechnologyRDS(on) = 0.045Gl Fast Switchingl Fully Avalanche RatedID = 23ASl Lead-FreeDescriptionFifth Generation HEXFETs from International Rectifier utilize advancedprocessing te
irlr2703 irlu2703.pdf
PD- 95083AIRLR/U2703PbFHEXFET Power MOSFETl Logic-Level Gate Drivel Ultra Low On-Resistance DVDSS = 30Vl Surface Mount (IRLR2703)l Straight Lead (IRLU2703)l Advanced Process TechnologyRDS(on) = 0.045Gl Fast Switchingl Fully Avalanche RatedID = 23ASl Lead-FreeDescriptionFifth Generation HEXFETs from International Rectifier utilize advancedprocessing te
irlu2703.pdf
isc N-Channel MOSFET Transistor IRLU2703FEATURESWith TO-251(IPAK) packagingHigh speed switchingEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplyDC-DC convertersMotor controlSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UN
irlu2705pbf irlr2705pbf.pdf
PD - 95062AIRLR2705PbFIRLU2705PbFl Logic-Level Gate DriveHEXFET Power MOSFETl Ultra Low On-ResistanceDl Surface Mount (IRLR2705)VDSS = 55Vl Straight Lead (IRLU2705)l Advanced Process Technologyl Fast Switching RDS(on) = 0.040Gl Fully Avalanche Ratedl Lead-FreeID = 28ASDescriptionFifth Generation HEXFETs from International Rectifier utilize advancedp
irlr2705pbf irlu2705pbf.pdf
PD - 95062AIRLR2705PbFIRLU2705PbFl Logic-Level Gate DriveHEXFET Power MOSFETl Ultra Low On-ResistanceDl Surface Mount (IRLR2705)VDSS = 55Vl Straight Lead (IRLU2705)l Advanced Process Technologyl Fast Switching RDS(on) = 0.040Gl Fully Avalanche Ratedl Lead-FreeID = 28ASDescriptionFifth Generation HEXFETs from International Rectifier utilize advancedp
irlu2705.pdf
isc N-Channel MOSFET Transistor IRLU2705FEATURESWith TO-251(IPAK) packagingHigh speed switchingEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplyDC-DC convertersMotor controlSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UN
Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
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Recientemente añadidas las descripciónes de los transistores:
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