All MOSFET. IRLU2703PBF Datasheet

 

IRLU2703PBF Datasheet and Replacement


   Type Designator: IRLU2703PBF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 45 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
   |Id| ⓘ - Maximum Drain Current: 23 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 140 nS
   Cossⓘ - Output Capacitance: 210 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.045 Ohm
   Package: TO251
 

 IRLU2703PBF substitution

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IRLU2703PBF Datasheet (PDF)

 ..1. Size:313K  international rectifier
 irlu2703pbf irlr2703pbf.pdf pdf_icon

IRLU2703PBF

PD- 95083AIRLR/U2703PbFHEXFET Power MOSFETl Logic-Level Gate Drivel Ultra Low On-Resistance DVDSS = 30Vl Surface Mount (IRLR2703)l Straight Lead (IRLU2703)l Advanced Process TechnologyRDS(on) = 0.045Gl Fast Switchingl Fully Avalanche RatedID = 23ASl Lead-FreeDescriptionFifth Generation HEXFETs from International Rectifier utilize advancedprocessing te

 6.1. Size:313K  international rectifier
 irlr2703 irlu2703.pdf pdf_icon

IRLU2703PBF

PD- 95083AIRLR/U2703PbFHEXFET Power MOSFETl Logic-Level Gate Drivel Ultra Low On-Resistance DVDSS = 30Vl Surface Mount (IRLR2703)l Straight Lead (IRLU2703)l Advanced Process TechnologyRDS(on) = 0.045Gl Fast Switchingl Fully Avalanche RatedID = 23ASl Lead-FreeDescriptionFifth Generation HEXFETs from International Rectifier utilize advancedprocessing te

 6.2. Size:261K  inchange semiconductor
 irlu2703.pdf pdf_icon

IRLU2703PBF

isc N-Channel MOSFET Transistor IRLU2703FEATURESWith TO-251(IPAK) packagingHigh speed switchingEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplyDC-DC convertersMotor controlSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UN

 7.1. Size:260K  international rectifier
 irlr2705pbf irlu2705pbf.pdf pdf_icon

IRLU2703PBF

PD - 95062AIRLR2705PbFIRLU2705PbFl Logic-Level Gate DriveHEXFET Power MOSFETl Ultra Low On-ResistanceDl Surface Mount (IRLR2705)VDSS = 55Vl Straight Lead (IRLU2705)l Advanced Process Technologyl Fast Switching RDS(on) = 0.040Gl Fully Avalanche Ratedl Lead-FreeID = 28ASDescriptionFifth Generation HEXFETs from International Rectifier utilize advancedp

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Datasheet: IRLR8721PBF , IRLR8721PBF-1 , IRLR8726PBF , IRLR8729PBF , IRLR8729PBF-1 , IRLR8743PBF , IRLR9343PBF , IRLU9343PBF , AON7403 , IRLU2705PBF , IRLU2905ZPBF , IRLU3103PBF , IRLU3110ZPBF , IRLU3114ZPBF , IRLU3303PBF , IRLU3410PBF , IRLU3636PBF .

History: HSBA3062 | IPI80N06S3-07

Keywords - IRLU2703PBF MOSFET datasheet

 IRLU2703PBF cross reference
 IRLU2703PBF equivalent finder
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