IRLU110PBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: IRLU110PBF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Máxima disipación de potencia (Pd): 25 W
   Voltaje máximo drenador - fuente |Vds|: 100 V
   Voltaje máximo fuente - puerta |Vgs|: 10 V
   Corriente continua de drenaje |Id|: 4.3 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   Tensión umbral entre puerta y fuente |Vgs(th)|: 2 V
   Carga de la puerta (Qg): 6.1 nC
   Tiempo de subida (tr): 47 nS
   Conductancia de drenaje-sustrato (Cd): 80 pF
   Resistencia entre drenaje y fuente RDS(on): 0.54 Ohm
   Paquete / Cubierta: TO251

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IRLU110PBF Datasheet (PDF)

..1. Size:1177K international rectifier
irlr110pbf irlu110pbf.pdf

PD - 95601AIRLR110PbFIRLU110PbF Lead-Free1/10/05Document Number: 91323 www.vishay.com1IRLR/U110PbFDocument Number: 91323 www.vishay.com2IRLR/U110PbFDocument Number: 91323 www.vishay.com3IRLR/U110PbFDocument Number: 91323 www.vishay.com4IRLR/U110PbFDocument Number: 91323 www.vishay.com5IRLR/U110PbFDocument Number: 91323 www.vishay.com6IRLR/U11

..2. Size:2150K vishay
irlr110 irlu110 irlr110pbf irlu110pbf sihlr110 sihlu110.pdf

IRLR110, IRLU110, SiHLR110, SiHLU110Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 100Definition Dynamic dV/dt RatingRDS(on) ()VGS = 5.0 V 0.54 Repetitive Avalanche RatedQg (Max.) (nC) 6.1 Surface Mount (IRLR110, SiHLR110)Qgs (nC) 2.0 Straight Lead (IRLU110, SiHLU110)Qgd (nC) 3.3 Available i

6.1. Size:843K cn vbsemi
irlu110p.pdf

IRLU110Pwww.VBsemi.twN-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY DT-Trench Power MOSFETVDS (V) RDS(on) ()ID (A) 175 C Junction Temperature0.115 at VGS = 10 V15 100 % Rg Tested1000.120 at VGS = 6 V 15APPLICATIONS Primary Side SwitchTO-251DGSG D SN-Channel MOSFETTop ViewABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise

7.1. Size:244K fairchild semi
irlr110a irlu110a.pdf

IRLR/U110AFEATURESBVDSS = 100 V Avalanche Rugged TechnologyRDS(on) = 0.44 Rugged Gate Oxide Technology Lower Input CapacitanceID = 4.7 A Improved Gate Charge Extended Safe Operating AreaD-PAK I-PAK Lower Leakage Current: 10A (Max.) @ VDS = 100V Lower RDS(ON): 0.336 (Typ.) 2112331. Gate 2. Drain 3. SourceAbsolute Maximum Ratings

7.2. Size:2125K vishay
irlr110 irlu110 sihlr110 sihlu110.pdf

7.3. Size:254K inchange semiconductor
irlu110a.pdf

isc N-Channel MOSFET Transistor IRLU110AFEATURESWith TO-251(IPAK) packagingHigh speed switchingEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplyDC-DC convertersMotor controlSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UN

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