All MOSFET. IRLU110PBF Datasheet

 

IRLU110PBF Datasheet and Replacement


   Type Designator: IRLU110PBF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
   |Id| ⓘ - Maximum Drain Current: 4.3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 6.1 nC
   tr ⓘ - Rise Time: 47 nS
   Cossⓘ - Output Capacitance: 80 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.54 Ohm
   Package: TO251
 

 IRLU110PBF substitution

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IRLU110PBF Datasheet (PDF)

 ..1. Size:1177K  international rectifier
 irlr110pbf irlu110pbf.pdf pdf_icon

IRLU110PBF

PD - 95601AIRLR110PbFIRLU110PbF Lead-Free1/10/05Document Number: 91323 www.vishay.com1IRLR/U110PbFDocument Number: 91323 www.vishay.com2IRLR/U110PbFDocument Number: 91323 www.vishay.com3IRLR/U110PbFDocument Number: 91323 www.vishay.com4IRLR/U110PbFDocument Number: 91323 www.vishay.com5IRLR/U110PbFDocument Number: 91323 www.vishay.com6IRLR/U11

 ..2. Size:2150K  vishay
 irlr110 irlu110 irlr110pbf irlu110pbf sihlr110 sihlu110.pdf pdf_icon

IRLU110PBF

IRLR110, IRLU110, SiHLR110, SiHLU110Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 100Definition Dynamic dV/dt RatingRDS(on) ()VGS = 5.0 V 0.54 Repetitive Avalanche RatedQg (Max.) (nC) 6.1 Surface Mount (IRLR110, SiHLR110)Qgs (nC) 2.0 Straight Lead (IRLU110, SiHLU110)Qgd (nC) 3.3 Available i

 6.1. Size:843K  cn vbsemi
 irlu110p.pdf pdf_icon

IRLU110PBF

IRLU110Pwww.VBsemi.twN-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY DT-Trench Power MOSFETVDS (V) RDS(on) ()ID (A) 175 C Junction Temperature0.115 at VGS = 10 V15 100 % Rg Tested1000.120 at VGS = 6 V 15APPLICATIONS Primary Side SwitchTO-251DGSG D SN-Channel MOSFETTop ViewABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise

 7.1. Size:244K  fairchild semi
 irlr110a irlu110a.pdf pdf_icon

IRLU110PBF

IRLR/U110AFEATURESBVDSS = 100 V Avalanche Rugged TechnologyRDS(on) = 0.44 Rugged Gate Oxide Technology Lower Input CapacitanceID = 4.7 A Improved Gate Charge Extended Safe Operating AreaD-PAK I-PAK Lower Leakage Current: 10A (Max.) @ VDS = 100V Lower RDS(ON): 0.336 (Typ.) 2112331. Gate 2. Drain 3. SourceAbsolute Maximum Ratings

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Datasheet: IRLU2908PBF , IRLU014N , IRLU014NPBF , IRLU014PBF , IRLU024NPBF , IRLU024PBF , IRLU024ZPBF , IRLU110 , IRFB4227 , IRLU120 , IRLU120NPBF , IRLU120PBF , IRLR014N , IRLR014NPBF , IRLR014PBF , IRLR024NPBF , IRLR024PBF .

History: WPM2341A-3-TR | NCEP070N12D

Keywords - IRLU110PBF MOSFET datasheet

 IRLU110PBF cross reference
 IRLU110PBF equivalent finder
 IRLU110PBF lookup
 IRLU110PBF substitution
 IRLU110PBF replacement

 

 
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